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參數(shù)資料
| 型號： | Q62702-C361-X1 |
| 廠商： | SIEMENS AG |
| 英文描述： | PNP SILICON TRANSISTOR |
| 中文描述： | 進步黨硅晶體管 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 101K |
| 代理商： | Q62702-C361-X1 |
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
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|---|---|
| Q62702-G0041 | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
| Q62702-G0042 | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
| Q62702-G0043 | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
| Q62702-G0057 | Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ヘ-gain block Unconditionally stable) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-C362 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON TRANSISTOR |
| Q62702-C452 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon AF Transistors (For AF input stages and driver applications High current gain) |
| Q62702-C619 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
| Q62702-C620 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
| Q62702-C621 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
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