參數(shù)資料
型號(hào)： Q62702-C2495
廠商： SIEMENS AG
英文描述： NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)
中文描述： npn型/進(jìn)步黨硅數(shù)字Tansistor陣列（開關(guān)電路，逆變器，接口電路，驅(qū)動(dòng)電路）
文件頁數(shù)： 2/11頁
文件大?。?/td> 101K
代理商： Q62702-C2495
BGC420
High Frequency Products
2
Edition A13, 05/99
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation, T
s
≤
110°C
1)
Control voltage
Input Current for pin 1
Symbol
I
CC
Vcc
P
tot
Vc
Ir
Unit
mA
V
mW
V
μ
A
15
4.5
68
Vcc+0.5
380
Junction temperature
Ambient temperature range
Storage temperature range
T
j
T
A
T
stg
150
°
C
°
C
°
C
-65...+150
-65...+150
Thermal Resistance
Junction-soldering point
1)
1)TS is measured on the Ground lead at the soldering point to the pcb
.
R
th JS
≤
270
K/W
Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1
with Rx=82
W
),
Tc=25°C, Vcc=3V, I
CC
￡
7mA unless noted
Symbol
Gp
Parameter
Power Gain (
￥
S
21
￥
2
)
Unit
dB
Min
17.5
14.5
Typ
19
16
1.3
1.5
1
1
15
15
7
9
4
7
3.7
2.5
<10
35
-60
Max
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
NF
Noise Figure (in 50
W
System)
dB
1.5
1.7
P
-1dB
Output Power at 1dB Gain Compression f=900MHz
(in 50
W
System)
Third Order Intercept Point
(Output,
G
Opt
)
Input Return Loss
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
dBm
IP
3
dBm
RL
in
dB
RL
out
Output Return Loss
dB
t
on
t
off
I
leak
I
VcOn
I
VcOff
V
cmin
V
cmax
2)
A positive sign denotes a current flowing form the Pin into the external circuit.
On Switching Time
3)
Off Switching Time
3)
Leakage Current In Sleep Mode
Controll Pin (Vc) Current in Active Mode
2)
Controll Pin (Vc) Current in Sleep Mode
2)
Minimum Voltage at Vc for Sleep Mode
Maximum Voltage at Vc for Active Mode
μs
μs
μA
μA
nA
V
V
V
cc
- 0.3V
0V+0.3V
3)
This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout.
相關(guān)PDF資料
PDF描述
Q62702-C2496 Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 68pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080&quot; x 0.050&quot; x 0.055&quot;; Container: Bag; Features: MIL-PRF-55681: P Failure Rate
Q62702-C25 NPN Silicon AF Switching Transistor (For general AF applications High breakdown voltage)
Q62702-C2517 PNP Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current)
Q62702-C327 PNP SILICON PLANAR TRANSISTORS
Q62702-C362 PNP SILICON TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q62702-C2496 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)
Q62702-C25 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Switching Transistor (For general AF applications High breakdown voltage)
Q62702-C2517 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current)
Q62702-C252 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON TRANSISTORS
Q62702-C2529 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain)
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