型號(hào) | 廠商 | 描述 |
q62702-c1704 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |
q62702-c1712 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |
q62702-c1713 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |
q62702-c1714 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (For general AF applications High collector current) |
q62702-c1715 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |
q62702-c172 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON TRANSISTOR |
q62702-c1721 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (For general AF applications High collector current High current gain) |
q62702-c1727 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |
q62702-c1729 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
q62702-c173 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON TRANSISTOR |
q62702-c1730 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
q62702-c1731 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
q62702-c1732 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors |
q62702-c1735 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 56000uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-0.25pF; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: M Failure Rate |
q62702-c1738 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 56000uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-0.25pF; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate |
q62702-c1739 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors |
q62702-c1740 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors |
q62702-c1741 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |
q62702-c1742 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
q62702-c1743 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors |
q62702-c1744 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors |
q62702-c1746 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |
q62702-c175 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON TRANSISTOR |
q62702-c1753 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors |
q62702-c1761 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
q62702-c177 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON TRANSISTOR |
q62702-c1772 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |
q62702-c1773 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
q62702-c1774 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
q62702-c178 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON TRANSISTOR |
q62702-c1847 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors |
q62702-c2106 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
q62702-c2107 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (For AF driver and output stages High collector current) |
q62702-c2109 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (For AF driver and output stages High collector current) |
q62702-c2110 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (For AF driver and output stages High collector current) |
q62702-c2112 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 62pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: M Failure Rate |
q62702-c2113 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (For AF driver and output stages High collector current) |
q62702-c2115 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (For AF driver and output stages High collector current) |
q62702-c2116 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (For AF driver and output stages High collector current) |
q62702-c2117 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
q62702-c2119 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
q62702-c2120 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 62pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate |
q62702-c2122 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
q62702-c2123 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
q62702-c2125 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
q62702-c2126 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 62pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate |
q62702-c2127 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 62pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate |
q62702-c2128 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistor (For general AF application High collector current High current gain) |
q62702-c2129 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistor (For general AF application High collector current High current gain) |
q62702-c2253 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit |