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參數(shù)資料
| 型號： | Q62702-C2120 |
| 廠商： | SIEMENS AG |
| 英文描述： | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 62pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate |
| 中文描述： | NPN硅晶體管自動對焦（為自動驅(qū)動器和輸出級高集電極電流） |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 101K |
| 代理商： | Q62702-C2120 |
BGC420
High Frequency Products
5
Edition A13, 05/99
Typical Application
Remarks:
1)
2)
3)
4)
To provide low frequency stability C2 should be 10 times C3.
Be aware that also coupling capacitors determine the switching times.
The collector current at Q1 can be estimated by Ic=0.6V / Rx[
W
].
Place C2 as close to the device as possible.
D1
D2
R1 (47k)
Q2
R2 (500R)
R3
10k
R4 (2k7)
Q1
Vc,8
Vb,3
GND,7,2
RFin,1
RFout,6
Vr,5
Vcc,4
on
off
C2, 1nF
L1,100nH
C3, 100pF
Rx
3
C4,150pF C5,100nF
Figure 1. Typical Application and Internal Circuit
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| Q62702-C2122 | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
| Q62702-C2123 | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
| Q62702-C2125 | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
| Q62702-C2126 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 62pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate |
| Q62702-C2127 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 62pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate |
相關(guān)代理商/技術(shù)參數(shù) |
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| Q62702-C2122 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
| Q62702-C2123 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
| Q62702-C2125 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
| Q62702-C2126 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistor (For general AF application High collector current High current gain) |
| Q62702-C2127 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Transistor (For general AF application High collector current High current gain) |
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