參數(shù)資料
型號(hào): D1211UK
英文描述: Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500MHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(10W-12.5V-500MHz,單端式))
中文描述: 金鍍金屬多功能硅的DMOS射頻場(chǎng)效應(yīng)管(功率10W - 12.5V - 500MHz的單端)(鍍金多用的DMOS射頻硅場(chǎng)效應(yīng)管(功率10W - 12.5V - 500MHz的單端式))
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 16K
代理商: D1211UK
D1211UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 12/95
Parameter
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
η
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Test Conditions
Min.
Typ.
Max.
Unit
BV
DSS
I
DSS
I
GSS
V
GS
= 0
I
D
= 10mA
V
DS
= 12.5V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 10W
V
DS
= 12.5V
f = 500MHz
V
DS
= 0V
V
DS
= 12.5V V
GS
= 0
V
DS
= 12.5V V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 1A
I
DQ
= 0.4A
V
GS
= –5V f = 1MHz
f = 1MHz
f = 1MHz
V
mA
μ
A
V
S
dB
%
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
40
1
1
7
0.5
0.8
10
50
20:1
60
40
4
R
THj–case
Thermal Resistance Junction – Case
Max. 6°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
μ
s , Duty Cycle
2%
相關(guān)PDF資料
PDF描述
D1211 METAL GATE RF SILICON FET
D1211UK METAL GATE RF SILICON FET
D1212UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-12.5V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(100W-12.5V-500MHz,推挽式))
D1212UK METAL GATE RF SILICON FET
D1213UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(6W-7.2V-500MHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(6W-7.2V-500MHz,單端式))
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