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  • 參數(shù)資料
    型號(hào): D1213UK
    英文描述: Gold Metallised Multi-Purpose Silicon DMOS RF FET(6W-7.2V-500MHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(6W-7.2V-500MHz,單端式))
    中文描述: 金鍍金屬多功能硅的DMOS射頻場(chǎng)效應(yīng)管(6W - 7.2V - 500MHz的單端)(鍍金多用的DMOS射頻硅場(chǎng)效應(yīng)管(6W - 7.2V - 500MHz的單端式))
    文件頁(yè)數(shù): 1/4頁(yè)
    文件大小: 38K
    代理商: D1213UK
    DIM
    A
    B
    C
    D
    E
    F
    G
    H
    I
    J
    K
    L
    M
    N
    O
    P
    Q
    mm
    6.47
    0.76
    45°
    0.76
    1.14
    2.67
    11.73
    8.43
    7.92
    0.20
    0.64
    0.30
    3.25
    2.11
    6.35SQ
    1.65
    0.13
    Tol.
    0.08
    0.08
    0.08
    0.08
    0.08
    0.13
    0.08
    0.08
    0.02
    0.02
    0.02
    0.08
    0.08
    0.08
    0.51
    max
    Inches
    .255
    .030
    45
    °
    .030
    .045
    .105
    .462
    .332
    .312
    .008
    .025
    .012
    .128
    .083
    .250SQ
    .065
    .005
    Tol.
    .003
    .003
    .003
    .003
    .003
    .005
    .003
    .003
    .001
    .001
    .001
    .003
    .003
    .003
    .020
    max
    D1213UK
    Prelim. 7/99
    Semelab plc.
    Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
    E-mail:
    sales@semelab.co.uk
    Website:
    http://www.semelab.co.uk
    P
    D
    BV
    DSS
    BV
    GSS
    I
    D(sat)
    T
    stg
    T
    j
    Power Dissipation
    Drain – Source Breakdown Voltage
    Gate – Source Breakdown Voltage
    Drain Current
    Storage Temperature
    Maximum Operating Junction Temperature
    58W
    40V
    ±20V
    20A
    –65 to 150°C
    200°C
    MECHANICAL DATA
    A
    F
    E
    B
    D
    C
    G
    H
    I
    P
    M
    N
    O
    J
    K
    L
    1
    2
    3
    4
    5
    6
    7
    8
    Q
    GOLD METALLISED
    MULTI-PURPOSE SILICON
    DMOS RF FET
    6W – 7.2V – 500MHz
    SINGLE ENDED
    FEATURES
    SIMPLIFIED AMPLIFIER DESIGN
    SUITABLE FOR BROAD BAND APPLICATIONS
    LOW C
    rss
    LOW NOISE
    HIGH GAIN – 10 dB MINIMUM
    PIN 1 Source
    PIN 2 Drain
    PIN 3 Drain
    PIN 4 Source
    PIN 5 Source
    PIN 6 Gate
    PIN 7 Gate
    PIN 8 Source
    ABSOLUTE MAXIMUM RATINGS
    (T
    case
    = 25°C unless otherwise stated)
    APPLICATIONS
    HF/VHF/UHF COMMUNICATIONS
    from 1 MHz to 1 GHz
    METAL GATE RF SILICON FET
    TetraFET
    DBC1 Package
    相關(guān)PDF資料
    PDF描述
    D1213 METAL GATE RF SILICON FET
    D1213UK METAL GATE RF SILICON FET
    D1217UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-12.5V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(40W-12.5V-500MHz,推挽式))
    D1217 METAL GATE RF SILICON FET
    D1217UK METAL GATE RF SILICON FET
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