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參數(shù)資料
| 型號(hào)： | D1213UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(6W-7.2V-500MHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(6W-7.2V-500MHz,單端式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場(chǎng)效應(yīng)管（6W - 7.2V - 500MHz的單端）（鍍金多用的DMOS射頻硅場(chǎng)效應(yīng)管（6W - 7.2V - 500MHz的單端式）） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 38K |
| 代理商： | D1213UK |
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
mm
6.47
0.76
45°
0.76
1.14
2.67
11.73
8.43
7.92
0.20
0.64
0.30
3.25
2.11
6.35SQ
1.65
0.13
Tol.
0.08
0.08
5°
0.08
0.08
0.08
0.13
0.08
0.08
0.02
0.02
0.02
0.08
0.08
0.08
0.51
max
Inches
.255
.030
45
°
.030
.045
.105
.462
.332
.312
.008
.025
.012
.128
.083
.250SQ
.065
.005
Tol.
.003
.003
5°
.003
.003
.003
.005
.003
.003
.001
.001
.001
.003
.003
.003
.020
max
D1213UK
Prelim. 7/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
58W
40V
±20V
20A
–65 to 150°C
200°C
MECHANICAL DATA
A
F
E
B
D
C
G
H
I
P
M
N
O
J
K
L
1
2
3
4
5
6
7
8
Q
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
6W – 7.2V – 500MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
LOW NOISE
HIGH GAIN – 10 dB MINIMUM
PIN 1 Source
PIN 2 Drain
PIN 3 Drain
PIN 4 Source
PIN 5 Source
PIN 6 Gate
PIN 7 Gate
PIN 8 Source
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
DBC1 Package
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| D1213 | METAL GATE RF SILICON FET |
| D1213UK | METAL GATE RF SILICON FET |
| D1217UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-12.5V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(40W-12.5V-500MHz,推挽式)) |
| D1217 | METAL GATE RF SILICON FET |
| D1217UK | METAL GATE RF SILICON FET |
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