參數(shù)資料
型號: D1213UK
英文描述: Gold Metallised Multi-Purpose Silicon DMOS RF FET(6W-7.2V-500MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(6W-7.2V-500MHz,單端式))
中文描述: 金鍍金屬多功能硅的DMOS射頻場效應(yīng)管(6W - 7.2V - 500MHz的單端)(鍍金多用的DMOS射頻硅場效應(yīng)管(6W - 7.2V - 500MHz的單端式))
文件頁數(shù): 3/4頁
文件大?。?/td> 38K
代理商: D1213UK
Figure 3 – IMD vs. Output Power.
D1213UK
Prelim. 7/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
0
20
40
60
80
100
Drain Efficiency
%
0
0.5
1
1.5
2
2.5
Pin W
Pout
Drain Efficiency
0
2
4
6
8
10
Pout
W
f = 500MHz
Idq = 0.5A
Vds = 7.2V
0
2
4
6
8
10
Pout
W
0
0.5
1
1.5
2
2.5
Pin W
f = 500MHz
Idq = 0.5A
Vds = 7.2V
6
7
8
9
10
11
Gain
dB
Pout
Gain
f1 = 500.0 MHz
f2 = 500.1 MHz
Vds = 7.2V
Idq = 0.5A
-45
-40
-35
-30
-25
-20
-15
IMD3
dBc
0
2
4
Pout W PEP
6
8
10
Figure 1 – Power Output and Efficiency
vs. Power Input.
Figure 2 – Power Output & Gain
vs. Power Input.
D1213UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
500
Z
S
Z
L
2.3 - j0.4 2.1 - j1.9
相關(guān)PDF資料
PDF描述
D1213 METAL GATE RF SILICON FET
D1213UK METAL GATE RF SILICON FET
D1217UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-12.5V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場效應(yīng)管(40W-12.5V-500MHz,推挽式))
D1217 METAL GATE RF SILICON FET
D1217UK METAL GATE RF SILICON FET
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