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參數(shù)資料
| 型號(hào)： | D1211 |
| 廠商： | TT electronics Semelab Limited |
| 英文描述： | METAL GATE RF SILICON FET |
| 中文描述： | 金屬門射頻硅場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 16K |
| 代理商： | D1211 |
D1211UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 12/95
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
30W
40V
±20V
10A
–65 to 150°C
200°C
MECHANICAL DATA
1
2
3
4
8
7
6
5
M
N
B
C
A
E
F
G
D
H
K
L
J
P
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 12.5V – 500MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
VERY LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 10 dB MINIMUM
SO8 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
P
mm
4.06
5.08
1.27
0.51
3.56
4.06
1.65
Tol.
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
+0.25
-0.00
Min.
Max.
Max.
Min.
Max.
±0.08
Max.
±0.08
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
Tol.
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
+0.010
-0.000
Min.
Max.
Max.
Min.
Max.
±0.003
Max.
±0.003
0.76
0.030
0.51
1.02
45°
0°
7°
0.20
2.18
4.57
0.020
0.040
45°
0°
7°
0.008
0.086
0.180
METAL GATE RF SILICON FET
TetraFET
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| D1211UK | METAL GATE RF SILICON FET |
| D1212UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-12.5V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(100W-12.5V-500MHz,推挽式)) |
| D1212UK | METAL GATE RF SILICON FET |
| D1213UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(6W-7.2V-500MHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(6W-7.2V-500MHz,單端式)) |
| D1213 | METAL GATE RF SILICON FET |
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