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參數(shù)資料
| 型號： | D1211 |
| 廠商： | TT electronics Semelab Limited |
| 英文描述： | METAL GATE RF SILICON FET |
| 中文描述： | 金屬門射頻硅場效應(yīng)管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 16K |
| 代理商： | D1211 |
D1211UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 12/95
Parameter
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
η
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Test Conditions
Min.
Typ.
Max.
Unit
BV
DSS
I
DSS
I
GSS
V
GS
= 0
I
D
= 10mA
V
DS
= 12.5V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 10W
V
DS
= 12.5V
f = 500MHz
V
DS
= 0V
V
DS
= 12.5V V
GS
= 0
V
DS
= 12.5V V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 1A
I
DQ
= 0.4A
V
GS
= –5V f = 1MHz
f = 1MHz
f = 1MHz
V
mA
μ
A
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
40
1
1
7
0.5
0.8
10
50
20:1
60
40
4
R
THj–case
Thermal Resistance Junction – Case
Max. 6°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
μ
s , Duty Cycle
≤
2%
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