參數(shù)資料
型號: CYDM064B16
廠商: Cypress Semiconductor Corp.
英文描述: 1.8V 4K/8K/16K x 16 MoBL㈢ Dual-Port Static RAM
中文描述: 1.8 4K/8K/16K㈢× 16的MoBL雙端口靜態(tài)存儲器
文件頁數(shù): 6/25頁
文件大?。?/td> 583K
代理商: CYDM064B16
CYDM256B16
CYDM128B16
CYDM064B16
Document #: 001-00217 Rev. *E
Page 6 of 25
When reading a semaphore, all sixteen data lines output the
semaphore value. The read value is latched in an output
register to prevent the semaphore from changing state during
a write from the other port. If both ports attempt to access the
semaphore within t
SPS
of each other, the semaphore will
definitely be obtained by one side or the other, but there is no
guarantee which side will control the semaphore. On
power-up, both ports should write “1” to all eight semaphores.
Architecture
The CYDM256B16, CYDM128B16, CYDM064B16 consist of
an array of 4K, 8K, or 16K words of 16 dual-port RAM cells,
I/O and address lines, and control signals (CE, OE, R/W).
These control pins permit independent access for reads or
writes to any location in memory. To handle simultaneous
writes/reads to the same location, a BUSY pin is provided on
each port. Two Interrupt (INT) pins can be utilized for
port-to-port communication. Two Semaphore (SEM) control
pins are used for allocating shared resources. With the M/S
pin, the devices can function as a master (BUSY pins are
outputs) or as a slave (BUSY pins are inputs). The devices
also have an automatic power-down feature controlled by CE.
Each port is provided with its own output enable control (OE),
which allows data to be read from the device.
Notes:
8. See Interrupts Functional Description for specific highest memory locations by device.
9. If BUSY
R
= L, then no change.
10.If BUSY
= L, then no change.
11.See Functional Description for specific addresses by device.
Table 1. Non-Contending Read/Write
Inputs
OE
X
X
X
X
X
L
L
L
H
L
L
X
Outputs
Operation
CE
H
X
L
L
L
L
L
L
X
H
X
H
R/W
X
X
L
L
L
H
H
H
X
H
H
UB
X
H
L
H
L
L
H
L
X
X
H
X
LB
X
H
H
L
L
H
L
L
X
X
H
X
SEM
H
H
H
H
H
H
H
H
X
L
L
L
I/O
8
I/O
15
High Z
High Z
Data In
High Z
Data In
Data Out
High Z
Data Out
High Z
Data Out
Data Out
Data In
I/O
0
I/O
7
High Z
High Z
High Z
Data In
Data In
High Z
Data Out
Data Out
High Z
Data Out
Data Out
Data In
Deselected: Power-down
Deselected: Power-down
Write to Upper Byte Only
Write to Lower Byte Only
Write to Both Bytes
Read Upper Byte Only
Read Lower Byte Only
Read Both Bytes
Outputs Disabled
Read Data in Semaphore Flag
Read Data in Semaphore Flag
Write D
IN0
into Semaphore Flag
Write D
IN0
into Semaphore Flag
Not Allowed
Not Allowed
X
L
L
X
X
X
H
L
X
H
X
L
L
L
L
Data In
Data In
X
X
Table 2. Interrupt Operation Example (Assumes BUSY
L
= BUSY
R
= HIGH)
[8]
Function
Left Port
Right Port
R/W
L
L
CE
L
L
OE
L
X
A
0L–13L
3FFF
[11]
INT
L
X
R/W
R
X
CE
R
X
OE
R
X
A
0R–13R
X
3FFF
[11]
3FFE
[11]
INT
R
L
[10]
H
[9]
Set Right INT
R
Flag
Reset Right INT
R
Flag
Set Left INT
L
Flag
Reset Left INT
L
Flag
X
X
X
X
X
X
L
L
X
X
X
X
L
[9]
H
[10]
L
L
X
X
X
L
L
3FFE
[11]
X
X
X
X
X
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