參數(shù)資料
型號: CYDM064B16
廠商: Cypress Semiconductor Corp.
英文描述: 1.8V 4K/8K/16K x 16 MoBL㈢ Dual-Port Static RAM
中文描述: 1.8 4K/8K/16K㈢× 16的MoBL雙端口靜態(tài)存儲器
文件頁數(shù): 11/25頁
文件大小: 583K
代理商: CYDM064B16
CYDM256B16
CYDM128B16
CYDM064B16
Document #: 001-00217 Rev. *E
Page 11 of 25
Electrical Characteristics for 3.0V
Over the Operating Range
Parameter
V
OH
V
OL
V
OL
ODR
V
IH
Description
CYDM256B16,
CYDM128B16,
CYDM064B16
-40
CYDM256B16,
CYDM128B16,
CYDM064B16
-55
Unit
V
V
V
V
P1 I/O
Voltage
3.0V (any port)
3.0V (any port)
3.0V (any port)
3.0V (any port)
P2 I/O
Voltage
Min.
2.1
Typ.
Max.
Min.
2.1
Typ.
Max.
Output HIGH Voltage (I
OH
= –2 mA)
Output LOW Voltage (I
OL
= 2 mA
)
ODR Output LOW Voltage (I
OL
= 8 mA
)
Input HIGH Voltage
0.4
0.2
V
DDIO
+ 0.2
0.7
1
1
0.4
0.2
V
DDIO
+ 0.2
0.7
1
1
2.0
2.0
V
IL
I
OZ
I
CEX
ODR
Input LOW Voltage
Output Leakage Current
ODR Output Leakage Current.
V
OUT
= V
CC
Input Leakage Current
Operating Current (V
CC
= Max.,
I
OUT
= 0 mA) Outputs Disabled
Standby Current (Both Ports TTL
Level) CE
L
and CE
R
V
CC
– 0.2,
SEM
L
= SEM
R
= V
CC
– 0.2, f = f
MAX
Standby Current (One Port TTL
Level) CE
L
| CE
R
V
IH
, f = f
MAX
Standby Current (Both Ports
CMOS Level) CE
L
& CE
R
V
CC
0.2V, SEM
L
and SEM
R
>
V
CC
– 0.2V, f = 0
Standby Current (One Port CMOS
Level) CE
L
| CE
R
V
IH
, f = f
MAX[21]
Ind.
3.0V (any port)
3.0V
3.0V
–0.2
–1
–1
–0.2
–1
–1
V
μ
A
μ
A
3.0V
3.0V
I
IX
I
CC
3.0V
3.0V
3.0V
3.0V
–1
1
–1
1
60
μ
A
mA
Ind.
49
70
42
I
SB1
Ind.
3.0V
3.0V
7
10
7
10
μ
A
I
SB2
Ind.
3.0V
3.0V
28
40
25
35
mA
I
SB3
Ind.
3.0V
3.0V
6
8
6
8
μ
A
I
SB4
3.0V
3.0V
28
40
25
35
mA
Capacitance
[22]
Parameter
Description
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= 3.0V
Max.
9
10
Unit
pF
pF
C
IN
C
OUT
Note:
22.Tested initially and after any design or process changes that may affect these parameters.
Input Capacitance
Output Capacitance
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