參數(shù)資料
型號: CY7C1487V33-133BGC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 2M x 36/4M x 18/1M x 72 Flow-through SRAM
中文描述: 1M X 72 CACHE SRAM, 6.5 ns, PBGA209
封裝: 14 X 22 MM, 1.76 MM HEIGHT, PLASTIC, FBGA-209
文件頁數(shù): 8/30頁
文件大?。?/td> 638K
代理商: CY7C1487V33-133BGC
PRELIMINARY
CY7C1481V33
CY7C1483V33
CY7C1487V33
Document #: 38-05284 Rev. *A
Page 8 of 30
CLK
Input-
Clock
Input-
Clock Input
. Used to capture all synchronous inputs to the device. Also used to increment the
burst counter when ADV is asserted LOW, during a burst operation.
Chip Enable 1 Input, active LOW
. Sampled on the rising edge of CLK. Used in conjunction
with CE
2
and CE
3
to select/deselect the device. ADSP is ignored if CE
1
is HIGH.
Chip Enable 2 Input, active HIGH
. Sampled on the rising edge of CLK. Used in conjunction
with CE
1
and CE
3
to select/deselect the device.(TQFP Only)
Chip Enable 3 Input, active LOW
. Sampled on the rising edge of CLK. Used in conjunction
with CE
1
and
CE
2
to select/deselect the device.(TQFP Only)
Output Enable, asynchronous input, active LOW
. Controls the direction of the I/O pins.
When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are three-stated,
and act as input data pins. OE is masked during the first clock of a read cycle when emerging
from a deselected state.
Advance Input signal, sampled on the rising edge of CLK
. When asserted, it automatically
increments the address in a burst cycle.
Address Strobe from Processor, sampled on the rising edge of CLK
. When asserted LOW,
A is captured in the address registers. A
[1:0]
are also loaded into the burst counter. When ADSP
and ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE
1
is
deasserted HIGH.
Address Strobe from Controller, sampled on the rising edge of CLK
. When asserted LOW,
A
[x:0]
is captured in the address registers. A
[1:0]
are also loaded into the burst counter. When
ADSP and ADSC are both asserted, only ADSP is recognized.
Selects Burst Order
. When tied to GND selects linear burst sequence. When tied to V
DDQ
or
left floating selects interleaved burst sequence. This is a strap pin and should remain static
during device operation.
ZZ
sleep
Input
. This active HIGH input places the device in a non-time critical
sleep
condition with data integrity preserved.
Bidirectional Data I/O lines
. As inputs, they feed into an on-chip data register that is triggered
by the rising edge of CLK. As outputs, they deliver the data contained in the memory location
specified by A during the previous clock rise of the read cycle. The direction of the pins is
controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQx
and DPx
are placed in a three-state condition. DQ a,b,c,d,e,f,g and h are 8 bits wide. DP
a,b,c,d,e,f,g and h are 1 bit wide.
CE
1
Synchronous
Input-
Synchronous
Input-
Synchronous
Input-
Asynchronous
CE
2
CE
3
OE
ADV
Input-
Synchronous
Input-
Synchronous
ADSP
ADSC
Input-
Synchronous
MODE
Input-
Static
ZZ
Input-
Asynchronous
I/O-
Synchronous
DQa, DPa
DQb, DPb
DQc, DPc
DQd, DPd
DQe, DPe
DQf, DPf
DQg, DPg
DQh, DPh
TDO
JTAG serial output
Synchronous
JTAG serial input
Synchronous
Test Mode Select
Synchronous
JTAG serial clock
Serial clock to the JTAG circuit
. (BGA Only)
Power Supply
Power supply inputs to the core of the device
. Should be connected to 3.3V
5% +5% power
supply.
Ground
Ground for the core of the device
. Should be connected to ground of the system.
I/O Power Supply
Power supply for the I/O circuitry
. Should be connected to a 2.375V(min.) to V
DD
(max.)
I/O Ground
Ground for the I/O circuitry
. Should be connected to ground of the system.
NC. This pin is reserved for expansion to 144Mb.
No connects
.
Serial data-out to the JTAG circuit
. Delivers data on the negative edge of TCK. (BGA Only)
TDI
Serial data-In to the JTAG circuit
. Sampled on the rising edge of TCK.(BGA Only)
TMS
This pin controls the Test Access Port state machine
. Sampled on the rising edge of TCK.
(BGA Only)
TCK
V
DD
V
SS
V
DDQ
V
SSQ
144M
NC
Pin Definitions
(continued)
Pin Name
I/O
Pin Description
相關(guān)PDF資料
PDF描述
CY7C1483V33 2M x 36/4M x 18/1M x 72 Flow-through SRAM
CY7C1483V33-100AC 2M x 36/4M x 18/1M x 72 Flow-through SRAM
CY7C1483V33-100BGC 2M x 36/4M x 18/1M x 72 Flow-through SRAM
CY7C1483V33-100BZC 2M x 36/4M x 18/1M x 72 Flow-through SRAM
CY7C1483V33-117AC 2M x 36/4M x 18/1M x 72 Flow-through SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C149 WAF 制造商:Cypress Semiconductor 功能描述:
CY7C149-45PC 功能描述:1KX4 18-PIN SRAM RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.173",4.40mm 寬) 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR)
CY7C150-10DC 制造商:Rochester Electronics LLC 功能描述:- Bulk
CY7C150-15PC 制造商:Rochester Electronics LLC 功能描述:4K (1K X 4)- 24 PIN 300 MIL SEPARATE I/O & RESET SRAM - Bulk
CY7C15025PC 制造商:CYPRESS 功能描述:*