參數(shù)資料
型號(hào)： CY7C1473V25
廠商： Cypress Semiconductor Corp.
英文描述： 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(帶NoBL結(jié)構(gòu)的72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM)
中文描述： 72兆位（2米x 36/4M x 18/1M × 72）流體系結(jié)構(gòu)，通過(guò)與總線延遲（帶總線延遲結(jié)構(gòu)的72兆位通過(guò)的SRAM（2米x 36/4M x 18/1M × 72）流的SRAM）
文件頁(yè)數(shù)： 30/32頁(yè)
文件大?。?/td> 1134K
代理商： CY7C1473V25
CY7C1471V25
CY7C1473V25
CY7C1475V25
Document #: 38-05287 Rev. *I
Page 30 of 32
Cypress Semiconductor Corporation, 2002-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the
use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to
be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT is a trademark of Integrated Device
Technology, Inc. All product and company names mentioned in this document are the trademarks of their respective holders.
Figure 6. 209-Ball FBGA (14 x 22 x 1.76 mm), 51-85167
Package Diagrams
(continued)
51-85167-**
相關(guān)PDF資料
PDF描述
CY7C1475V33 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(帶NoBL結(jié)構(gòu)的72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM)
CY7C1471V33 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(帶NoBL結(jié)構(gòu)的72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM)
CY7C1482V25-200BZXC 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
CY7C1480V25-200BZC 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
CY7C1480V25-200BZI 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1474BV25-167BGC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx72, 2.5V NoBL PL RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1474BV25-167BGCT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx72, 2.5V NoBL PL RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1474BV25-167BGI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx72, 2.5V NoBL PL RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1474BV25-167BGIT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx72 2.5V NoBL PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1474BV25-200BGC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx72, 2.5V NoBL PL RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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