參數(shù)資料
型號: CY7C1471V25-100AXC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
中文描述: 2M X 36 ZBT SRAM, 8.5 ns, PQFP100
封裝: 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100
文件頁數(shù): 29/30頁
文件大?。?/td> 373K
代理商: CY7C1471V25-100AXC
PRELIMINARY
CY7C1471V25
CY7C1473V25
CY7C1475V25
Document #: 38-05287 Rev. *E
Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
Cypress products are not warranted nor intended to be used for medical, life-support, life-saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress.
Page 29 of 30
NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT is a trademark of Integrated Device
Technology. All product and company names mentioned in this document are the trademarks of their respective holders.
Package Diagrams
(continued)
209-Ball FBGA (14 x 22 x 1.76 mm) BB209A
51-85167-**
相關(guān)PDF資料
PDF描述
CY7C1471V25-133BZXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1473V25-133BZC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1473V25-133BZXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1471V25-100BZC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1471V25-100BZXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1471V25-100AXI 制造商:Cypress Semiconductor 功能描述:
CY7C1471V25-100BZI 制造商:Cypress Semiconductor 功能描述:
CY7C1471V25-133AXC 功能描述:靜態(tài)隨機存取存儲器 72MB (2Mx36) 2.5v 133MHz 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1471V25-133AXCES 制造商:Cypress Semiconductor 功能描述:SRAM SYNC QUAD 2.5V 72MBIT 2MX36 6.5NS 100TQFP - Bulk
CY7C1471V25-133AXCT 功能描述:靜態(tài)隨機存取存儲器 2Mx36 2.5V NoBL FT 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray