參數(shù)資料
型號(hào)： CY7C1471V25-100AXC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
中文描述： 2M X 36 ZBT SRAM, 8.5 ns, PQFP100
封裝： 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100
文件頁(yè)數(shù)： 21/30頁(yè)
文件大小： 373K
代理商： CY7C1471V25-100AXC
PRELIMINARY
CY7C1471V25
CY7C1473V25
CY7C1475V25
Document #: 38-05287 Rev. *E
Page 21 of 30
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................–55
°
C to +125
°
C
Supply Voltage on V
DD
Relative to GND........–0.5V to +3.6V
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to V
DDQ
+ 0.5V
DC Input Voltage....................................–0.5V to V
DD
+ 0.5V
Electrical Characteristics
Over the Operating Range
[13, 14]
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
Range
Commercial
Ambient
Temperature
0°C to +70°C
V
DD
V
DDQ
2.5V–5%/+5%
1.7V to
V
DD
Parameter
V
DD
V
DDQ
Description
Power Supply Voltage
I/O Supply Voltage
Test Conditions
Min.
2.375
2.375
1.7
2.0
1.6
Max.
2.625
V
DD
1.9
Unit
V
V
V
V
V
V
V
V
V
V
V
μ
A
V
DDQ
= 2.5V
V
DDQ
= 1.8V
V
DD
= Min., I
OH
=
–1.0 mA, V
DDQ
= 2.5V
V
DD
= Min., I
OH
= –100
μ
A,V
DDQ
= 1.8V
V
DD
= Min., I
OL
=
1.0 mA, V
DDQ
= 2.5V
V
DD
= Min., I
OL
= 100
μ
A,V
DDQ
= 1.8V
V
DDQ
= 2.5V
V
DDQ
= 1.8V
V
DDQ
= 2.5V
V
DDQ
= 1.8V
GND
≤
V
I
≤
V
DDQ
V
OH
Output HIGH Voltage
V
OL
Output LOW Voltage
0.4
0.2
V
IH
Input HIGH Voltage
[13]
1.7
1.26
–0.3
–0.3
–5
V
DD
+ 0.3V
V
DD
+ 0.3V
0.7
0.36
5
V
IL
Input LOW Voltage
[13]
I
X
Input Load Current
except ZZ and MODE
Input Current of MODE Input = V
SS
–5
μ
A
μ
A
μ
A
μ
A
μ
A
mA
mA
mA
mA
Input = V
DD
Input = V
SS
Input = V
DD
30
Input Current of ZZ
–30
5
5
I
OZ
I
DD
Output Leakage Current GND
≤
V
I
≤
V
DDQ,
Output Disabled
V
DD
Operating Supply
Current
f = f
MAX
= 1/t
CYC
–5
V
DD
= Max., I
OUT
= 0 mA,
6.5-ns cycle, 133 MHz
8.5-ns cycle, 100 MHz
6.5-ns cycle, 133 MHz
8.5-ns cycle, 100 MHz
305
275
170
170
I
SB1
Automatic CE
Power-down
Current—TTL Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—TTL Inputs
V
DD
= Max, Device Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
f = f
MAX
, inputs switching
V
DD
= Max, Device Deselected,
V
IN
≤
0.3V or V
IN
> V
DD
– 0.3V,
f = 0, inputs static
V
DD
= Max, Device Deselected, or
V
IN
≤
0.3V or V
IN
> V
DDQ
– 0.3V
f = f
MAX
, inputs switching
V
DD
= Max, Device Deselected,
V
IN
≥
V
DD
– 0.3V or V
IN
≤
0.3V,
f = 0, inputs static
I
SB2
All speeds
120
mA
I
SB3
6.5-ns cycle, 133 MHz
8.5-ns cycle, 100 MHz
170
170
mA
mA
I
SB4
All Speeds
135
mA
Notes:
13.Overshoot: V
(AC) < V
+1.5V (Pulse width less than t
/2), undershoot: V
(AC) > –2V (Pulse width less than t
CYC
/2).
14.T
Power-up
: Assumes a linear ramp from 0V to V
DD
(min.) within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.
相關(guān)PDF資料
PDF描述
CY7C1471V25-133BZXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1473V25-133BZC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1473V25-133BZXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1471V25-100BZC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1471V25-100BZXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1471V25-100AXI 制造商:Cypress Semiconductor 功能描述:
CY7C1471V25-100BZI 制造商:Cypress Semiconductor 功能描述:
CY7C1471V25-133AXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 72MB (2Mx36) 2.5v 133MHz 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1471V25-133AXCES 制造商:Cypress Semiconductor 功能描述:SRAM SYNC QUAD 2.5V 72MBIT 2MX36 6.5NS 100TQFP - Bulk
CY7C1471V25-133AXCT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mx36 2.5V NoBL FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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