參數(shù)資料
型號(hào): CY7C1464AV33
廠商: Cypress Semiconductor Corp.
英文描述: 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture(帶NoBL結(jié)構(gòu)的36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM)
中文描述: 36兆位(1米x 36/2M x 18/512K × 72)流水線的SRAM架構(gòu)的總線延遲(帶總線延遲結(jié)構(gòu)的36兆位(1米x 36/2M x 18/512K × 72)流水線的SRAM)
文件頁(yè)數(shù): 5/27頁(yè)
文件大?。?/td> 469K
代理商: CY7C1464AV33
CY7C1460AV33
CY7C1462AV33
CY7C1464AV33
Document #: 38-05353 Rev. *D
Page 5 of 27
Pin Definitions
Pin Name
I/O Type
Input-
Synchronous
Pin Description
A0
A1
A
BW
a
BW
b
BW
c
BW
d
BW
e
BW
f
BW
g
BW
h
WE
Address Inputs used to select one of the address locations
. Sampled at the rising
edge of the CLK.
Input-
Synchronous
Byte Write Select Inputs, active LOW
. Qualified with WE to conduct writes to the SRAM.
Sampled on the rising edge of CLK. BW
a
controls DQ
a
and DQP
a
, BW
b
controls DQ
b
and
DQP
b
, BW
c
controls DQ
c
and DQP
c
, BW
d
controls DQ
d
and DQP
d
, BW
e
controls DQ
e
and
DQP
e
, BW
f
controls DQ
f
and DQP
f
, BW
g
controls DQ
g
and DQP
g
, BW
h
controls DQ
h
and
DQP
h
.
Input-
Synchronous
Input-
Synchronous
Write Enable Input, active LOW
. Sampled on the rising edge of CLK if CEN is active
LOW. This signal must be asserted LOW to initiate a write sequence.
Advance/Load Input used to advance the on-chip address counter or load a new
address
. When HIGH (and CEN is asserted LOW) the internal burst counter is advanced.
When LOW, a new address can be loaded into the device for an access. After being
deselected, ADV/LD should be driven LOW in order to load a new address.
ADV/LD
Pin Configurations
(continued)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
W
1
2
3
4
5
6
7
8
9
11
10
DQg
DQg
DQg
DQg
DQg
DQg
DQg
DQg
DQc
DQc
DQc
DQc
NC
DQPg
DQh
DQh
DQh
DQh
DQd
DQd
DQd
DQd
DQPd
DQPc
DQc
DQc
DQc
DQc
NC
DQh
DQh
DQh
DQh
DQPh
DQd
DQd
DQd
DQd
DQb
DQb
DQb
DQb
DQb
DQb
DQb
DQb
DQf
DQf
DQf
DQf
NC
DQPf
DQa
DQa
DQa
DQa
DQe
DQe
DQe
DQe
DQPa
DQPb
DQf
DQf
DQf
DQf
NC
DQa
DQa
DQa
DQa
DQPe
DQe
DQe
DQe
DQe
A
A
A
A
NC
NC
NC/144M
NC/72M
A
NC/288M
A
A
A
A
A
A
A1
A0
A
A
A
A
A
A
NC/576M
NC
NC
NC
NC
NC
BWS
b
BWS
f
BWS
e
BWS
a
BWS
c
BWS
g
BWS
d
BWS
h
TMS
TDI
TDO
TCK
NC
NC
MODE
NC
CEN
V
SS
NC
CLK
NC
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC/1G
V
DD
NC
OE
CE
3
CE
1
CE
2
ADV/LD
WE
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
ZZ
V
SS
V
SS
V
SS
V
SS
NC
V
DDQ
V
SS
V
SS
NC
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
209-ball FBGA (14 x 22 x 1.76 mm) Pinout
CY7C1464AV33 (512K x 72)
相關(guān)PDF資料
PDF描述
CY7C1462AV33 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture(帶NoBL結(jié)構(gòu)的36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM)
CY7C1472V33-167AXI 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
CY7C1472V33-167BZXI 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
CY7C1472V33-200AXC 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
CY7C1472V33-200BZC 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1464AV33-167BGI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx72 3.3V NoBL PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C146-55JC 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Dual 5V 16K-Bit 2K x 8 55ns 52-Pin PLCC 制造商:Cypress Semiconductor 功能描述:2K X 8 DUAL-PORT SRAM, 55 ns, PQCC52
CY7C146-55JCT 制造商:Cypress Semiconductor 功能描述:
CY7C146-55JXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 5V 2Kx8 COM Dual Port 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C146-55JXCT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 5V 2Kx8 COM Dual Port 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray