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參數(shù)資料
| 型號： | CY7C1462AV33 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture(帶NoBL結構的36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM) |
| 中文描述： | 36兆位（1米x 36/2M x 18/512K × 72）流水線的SRAM架構的總線延遲（帶總線延遲結構的36兆位（1米x 36/2M x 18/512K × 72）流水線的SRAM） |
| 文件頁數(shù)： | 27/27頁 |
| 文件大?。?/td> | 469K |
| 代理商： | CY7C1462AV33 |
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CY7C1460AV33
CY7C1462AV33
CY7C1464AV33
Document #: 38-05353 Rev. *D
Page 27 of 27
Document History Page
Document Title: CY7C1460AV33/CY7C1462AV33/CY7C1464AV33 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM
with NoBL Architecture
Document Number: 38-05353
Orig. of
Change
**
254911
See ECN
SYT
New Data sheet
Part number changed from previous revision. New and old part number differ
by the letter “A”
*A
303533
See ECN
SYT
Changed H9 pin from V
SSQ
to V
SS
on the Pin Configuration table for 209
FBGA on Page # 5
Changed the test condition from V
DD
= Min to V
DD
= Max for V
OL
in the
Electrical Characteristics table
Replaced
Θ
JA
and
Θ
JC
from TBD to respective Thermal Values for All
Packages on the Thermal Resistance Table
Changed I
DD
from 450, 400 & 350 mA to 475, 425 & 375 mA for 250, 200
and 167 MHz respectively
Changed I
SB1
from 190, 180 and 170 mA to 225 mA for 250, 200 and 167
MHz respectively
Changed I
SB2
from 80 mA to 100 mA for all frequencies
Changed I
SB3
from 180, 170 & 160 mA to 200 mA for 250, 200 and 167 MHz
respectively
Changed I
SB4
from 100 mA to 110 mA for all frequencies
Changed C
IN
, C
CLK
and C
I/O
to 6.5, 3 and 5.5 pF from 5, 5 and 7 pF for TQFP
Package
Changed t
CO
from 3.0 to 3.2 ns and t
DOH
from 1.3 ns to 1.5 ns for 200 MHz
Speed Bin
Added lead-free information for 100-pin TQFP and 165 FBGA and 209 BGA
packages
*B
331778
See ECN
SYT
Modified Address Expansion balls in the pinouts for 165 FBGA and 209 BGA
Package as per JEDEC standards and updated the Pin Definitions accord-
ingly
Modified V
OL,
V
OH
test conditions
Changed C
IN
, C
CLK
and C
I/O
to 7, 7and 6 pF from 5, 5 and 7 pF for 165 FBGA
Package
Added Industrial Temperature Grade
Changed I
SB2
and I
SB4
from 100 and 110 mA to 120 and 135 mA respectively
Updated the Ordering Information by Shading and Unshading MPNs as per
availability
*C
417509
See ECN
RXU
Converted from Preliminary to Final
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Changed I
X
current value in MODE from –5 & 30
μ
A to –30 & 5
μ
A respec-
tively and also Changed I
X
current value in ZZ from –30 & 5
μ
A to –5 & 30
μ
A respectively on page# 18
Modified test condition from V
IH
< V
DD
to
V
IH
<
V
DD
Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in the
Electrical Characteristics Table
Replaced Package Name column with Package Diagram in the Ordering
Information table
Replaced Package Diagram of 51-85050 from *A to *B
*D
473229
See ECN
NXR
Added the Maximum Rating for Supply Voltage on V
DDQ
Relative to GND
Changed t
TH
, t
TL
from 25 ns to 20 ns and t
TDOV
from 5 ns to 10 ns in TAP
AC Switching Characteristics table
Updated the Ordering Information table.
REV.
ECN No.
Issue Date
Description of Change
相關PDF資料 |
PDF描述 |
|---|---|
| CY7C1472V33-167AXI | 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture |
| CY7C1472V33-167BZXI | 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture |
| CY7C1472V33-200AXC | 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture |
| CY7C1472V33-200BZC | 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture |
| CY7C1472V33-200BZXC | 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1462AV33-167AXC | 功能描述:靜態(tài)隨機存取存儲器 2Mx18 3.3V NoBL PL 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1462AV33-167AXCT | 功能描述:靜態(tài)隨機存取存儲器 2Mx18 3.3V NoBL PL 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1462AV33-200AXI | 功能描述:靜態(tài)隨機存取存儲器 36Mb (2 M x 18) 靜態(tài)隨機存取存儲器 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1462BV25-250AXC | 功能描述:靜態(tài)隨機存取存儲器 36Mb (2 M x 18) 靜態(tài)隨機存取存儲器 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1462BV25-250BZXC | 制造商:Cypress Semiconductor 功能描述:SYNC - Trays 制造商:Cypress Semiconductor 功能描述:IC SRAM 36MBIT 250MHZ 165FBGA 制造商:Cypress Semiconductor 功能描述:Async Fast SRAMs |
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