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參數(shù)資料
| 型號(hào)： | CY7C1387D-200BZC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM |
| 中文描述： | 1M X 18 CACHE SRAM, 3 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 |
| 文件頁(yè)數(shù)： | 30/30頁(yè) |
| 文件大?。?/td> | 974K |
| 代理商： | CY7C1387D-200BZC |
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CY7C1386D, CY7C1386F
CY7C1387D, CY7C1387F
Document Number: 38-05545 Rev. *E
Page 30 of 30
Document History Page
Document Title: CY7C1386D/CY7C1387D/CY7C1386F/CY7C1387F, 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync
SRAM
Document Number: 38-05545
Orig. of
Change
**
254550
See ECN
RKF
New data sheet
*A
288531
See ECN
SYT
Edited description under “IEEE 1149.1 Serial Boundary Scan (JTAG)” for
non-compliance with 1149.1
Removed 225Mhz Speed Bin
Added Pb-free information for 100-pin TQFP, 119 BGA and 165 FBGA
Packages.
Added comment of ‘Pb-free BG packages availability’ below the Ordering
Information
*B
326078
See ECN
PCI
Address expansion pins/balls in the pinouts for all packages are modified as
per JEDEC standard
Added description on EXTEST Output Bus Tri-State
Changed description on the Tap Instruction Set Overview and Extest
Changed Device Width (23:18) for 119-BGA from 000110 to 101110
Added separate row for 165 -FBGA Device Width (23:18)
Changed
Θ
JA
and
Θ
JC
for TQFP Package
from 31 and 6
°
C/W to 28.66 and
4.08
°
C/W respectively
Changed
Θ
JA
and
Θ
JC
for BGA Package
from 45 and 7
°
C/W to 23.8 and 6.2
°
C/W respectively
Changed
Θ
JA
and
Θ
JC
for FBGA Package
from 46 and 3
°
C/W to 20.7 and
4.0
°
C/W respectively
Modified V
OL,
V
OH
test conditions
Removed comment of ‘Pb-free BG packages availability’ below the Ordering
Information
Updated Ordering Information Table
*C
418125
See ECN
NXR
Converted from Preliminary to Final.
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Changed the description of I
X
from Input Load Current to Input Leakage
Current on page# 18.
Changed the I
X
current values of MODE on page # 18 from –5
μ
A and 30
μ
A
to –30
μ
A and 5
μ
A.
Changed the I
X
current values of ZZ on page # 18 from –30
μ
A and 5
μ
A
to –5
μ
A and 30
μ
A.
Changed V
IH
< V
DD
to V
IH
< V
DD
on page # 18.
Replaced Package Name column with Package Diagram in the Ordering
Information table.
Updated Ordering Information Table.
*D
475009
See ECN
VKN
Added the Maximum Rating for Supply Voltage on V
DDQ
Relative to GND
Changed t
TH
, t
TL
from 25 ns to 20 ns and t
TDOV
from 5 ns to 10 ns in TAP
AC Switching Characteristics table.
Updated the Ordering Information table.
*E
793579
See ECN
VKN
Added Part numbers CY7C1386F and CY7C1387F
Added footnote# 3 regarding Chip Enable
Updated Ordering Information table
REV.
ECN NO.
Issue Date
Description of Change
[+] Feedback
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1387D-200BZI | 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM |
| CY7C1387D-200BZXC | 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM |
| CY7C1387D-200BZXI | 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM |
| CY7C1387D-250AXI | 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM |
| CY7C1387D-250BZI | 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C138XC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C139-25JC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C139-25JXC | 功能描述:IC SRAM 36KBIT 25NS 68PLCC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1392CV18-200BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mx8 1.8V DDR II SIO 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1392CV18-250BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mx8 1.8V DDR II SIO 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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