參數資料
型號: CY7C1386C
廠商: Cypress Semiconductor Corp.
元件分類: DRAM
英文描述: 18-Mb (512K x 36/1M x 18) Pipelined DCD Sync SRAM
中文描述: 18 MB的(為512k × 36/1M × 18)流水線雙氰胺同步靜態(tài)存儲器
文件頁數: 24/34頁
文件大?。?/td> 554K
代理商: CY7C1386C
CY7C1386C
CY7C1387C
Document #: 38-05239 Rev. *B
Page 24 of 34
I
SB4
Automatic CE
Power-down
Current—TTL Inputs
V
DD
= Max, Device Deselected,
V
IN
V
IH
or V
IN
V
IL
, f = 0
All Speeds
80
mA
Shaded areas contain advance information.
Notes:
13.Overshoot: V
(AC) < V
+1.5V (Pulse width less than t
/2), undershoot: V
(AC) > -2V (Pulse width less than t
CYC
/2).
14.TPower-up: Assumes a linear ramp from 0v to V
DD
(min.) within 200ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD\
Thermal Resistance
[15]
Parameter
Θ
JA
Description
Test Conditions
TQFP
Package
BGA
Package
fBGA
Package
Unit
°
C/W
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard
test methods and procedures
for measuring thermal
impedence, per EIA / JESD51.
31
45
46
Θ
JC
Thermal Resistance
(Junction to Case)
6
7
3
°
C/W
Capacitance
[15]
Parameter
Description
Test Conditions
TQFP
Package
BGA
Package
fBGA
Package
Unit
C
IN
Input Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
DD
= 3.3V.
V
DDQ
= 2.5V
5
8
9
pF
C
CLK
Clock Input Capacitance
5
8
9
pF
C
I/O
Input/Output Capacitance
5
8
9
pF
Notes:
15.Tested initially and after any design or process change that may affect these parameters
AC Test Loads and Waveforms
Electrical Characteristics
Over the Operating Range
[13, 14]
(continued)
Parameter
Description
Test Conditions
Min.
Max.
Unit
OUTPUT
R = 317
R = 351
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
R
L
= 50
Z
0
= 50
V
L
= 1.5V
3.3V
ALL INPUT PULSES
V
DD
GND
90%
10%
90%
10%
1ns
1ns
(c)
OUTPUT
R = 1667
R =1538
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
R
L
= 50
Z
0
= 50
V
L
= 1.25V
2.5V
ALL INPUT PULSES
V
DD
GND
90%
10%
90%
10%
1ns
1ns
(c)
3.3V I/O Test Load
2.5V I/O Test Load
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