參數(shù)資料
型號(hào): CY7C1372D-200BGI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture
中文描述: 1M X 18 ZBT SRAM, 3 ns, PBGA119
封裝: (14 X 22 X 2.4) MM, PLASTIC, BGA-119
文件頁(yè)數(shù): 30/30頁(yè)
文件大小: 344K
代理商: CY7C1372D-200BGI
PRELIMINARY
CY7C1370D
CY7C1372D
Document #: 38-05555 Rev. *A
Page 30 of 30
Document History Page
Document Title: CY7C1370D/CY7C1372D 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL Architecture
Document Number: 38-05555
Orig. of
Change
**
254509
See ECN
RKF
New data sheet
*A
276690
See ECN
VBL
Changed TQFP pkg to Lead-free TQFP in Ordering Information section
Added comment of Lead-free BG and BZ packages availability
REV.
ECN No.
Issue Date
Description of Change
相關(guān)PDF資料
PDF描述
CY7C1372D-200BZC 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture
CY7C1372D-200BZI 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture
CY7C1372D-225AXC 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture
CY7C1372D-225AXI 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture
CY7C1372D-225BGC 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1372DV25-167AXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx18 3.3V NoBL Sync PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1372DV25-167AXCT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx18 3.3V NoBL Sync PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1372DV25-167BGI 制造商:Cypress Semiconductor 功能描述:
CY7C1372DV25-167BZC 制造商:Cypress Semiconductor 功能描述:
CY7C1372DV25-167BZXC 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: