參數(shù)資料
型號(hào): CY7C1355C-100AI
廠商: Cypress Semiconductor Corp.
英文描述: 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture
中文描述: 9兆位(256 × 36/512K × 18)流體系結(jié)構(gòu),通過與總線延遲靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù): 32/32頁(yè)
文件大?。?/td> 496K
代理商: CY7C1355C-100AI
PRELIMINARY
CY7C1355B
CY7C1357B
Document #: 38-05539 Rev. **
Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
Page 32 of 33
NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT is a trademark of Integrated Device
Technology. All product and company names mentioned in this document are the trademarks of their respective holders.
Package Diagrams
(continued)
51-85180-**
165 FBGA 13 x 15 x 1.40 MM BB165D
相關(guān)PDF資料
PDF描述
CY7C1355C-100BGC 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture
CY7C1355C-100BGI 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture
CY7C1355C-100BZC 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture
CY7C1355C-100BZI 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture
CY7C1355C-117AC 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1355C-100AXC 功能描述:IC SRAM 9MBIT 100MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:NoBL™ 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:16M(2M x 8,1M x 16) 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤
CY7C1355C-100AXCT 功能描述:IC SRAM 9MBIT 100MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:NoBL™ 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M(8Mx32) 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA(8x13) 包裝:帶卷 (TR) 其它名稱:557-1327-2
CY7C1355C-100AXI 制造商:Cypress Semiconductor 功能描述:
CY7C1355C-100BGC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx36 3.3V NoBL Sync FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1355C-100BGCT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx36 3.3V NoBL Sync FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray