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參數(shù)資料
| 型號(hào)： | CY7C1316AV18 |
| 廠商： | Cypress Semiconductor Corp. |
| 元件分類： | DRAM |
| 英文描述： | 18-Mbit DDR-II SRAM 2-Word Burst Architecture |
| 中文描述： | 18兆位的DDR - II SRAM的2字突發(fā)結(jié)構(gòu) |
| 文件頁數(shù)： | 15/20頁 |
| 文件大?。?/td> | 228K |
| 代理商： | CY7C1316AV18 |
CY7C1316AV18
CY7C1318AV18
CY7C1320AV18
Document #: 38-05499 Rev. *B
Page 15 of 20
TAP Controller Block Diagram
TAP Electrical Characteristics
Over the Operating Range
[9, 11, 25]
Parameter
V
OH1
V
OH2
V
OL1
V
OL2
V
IH
V
IL
I
X
Description
Test Conditions
I
OH
=
2.0 mA
I
OH
=
100
μ
A
I
OL
= 2.0 mA
I
OL
= 100
μ
A
Min.
1.4
1.6
Max.
Unit
V
V
V
V
V
V
μ
A
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input and OutputLoad Current
0.4
0.2
0.65V
DD
–0.3
5
V
DD
+ 0.3
0.35V
DD
5
GND
≤
V
I
≤
V
DD
TAP AC Switching Characteristics
Over the Operating Range
[26, 27]
Parameter
t
TCYC
t
TF
t
TH
t
TL
Notes:
25.These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics Table.
26.t
and t
refer to the set-up and hold time requirements of latching data from the boundary scan register.
27.Test conditions are specified using the load in TAP AC test conditions. t
R
/t
F
= 1 ns.
Description
Min.
100
Max.
Unit
ns
MHz
ns
ns
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH
TCK Clock LOW
10
40
40
0
0
1
2
.
.
29
30
31
Boundary Scan Register
Identification Register
0
1
2
.
.
.
.
106
0
1
2
Instruction Register
Bypass Register
Selection
Circuitry
Selection
Circuitry
TAP Controller
TDI
TDO
TCK
TMS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1316AV18-167BZC | 18-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1318AV18-200BZC | 18-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1318AV18-250BZC | 18-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1320AV18-167BZC | 18-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1316AV18-200BZC | 18-Mbit DDR-II SRAM 2-Word Burst Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C13181SC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C13181XC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1318AV18-167BZC | 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| CY7C1318AV-200BZCES | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1318BV18-167BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx18 1.8V COM DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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