參數(shù)資料
型號: CY7C1176V18-300BZXI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
中文描述: 2M X 9 QDR SRAM, 0.45 ns, PBGA165
封裝: 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FPBGA-165
文件頁數(shù): 7/29頁
文件大?。?/td> 956K
代理商: CY7C1176V18-300BZXI
CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
Document Number: 001-06582 Rev. *C
Page 7 of 29
CQ
Echo Clock
Synchronous Echo Clock Outputs
. This is a free running clock and is synchronized to the input
clock (K) of the QDR-II+. The timings for the echo clocks are shown in
“Switching Characteristics”
on page 23.
ZQ
Input
Output Impedance Matching Input
. Used to tune the device outputs to the system data bus
impedance. CQ, CQ and Q
[x:0]
output impedance are set to 0.2 x RQ, where RQ is a resistor
connected between ZQ and ground. Alternatively, this pin is connected directly to V
DDQ
, which
enables the minimum impedance mode. This pin cannot be connected directly to GND or left uncon-
nected.
DOFF
Input
DLL Turn Off
Active LOW
. Connecting this pin to ground turns off the DLL inside the device. The
timings in the DLL turned-off operation are different from those listed in this data sheet. For normal
operation, this pin is connected to a pull up through a 10 K
or less pull up resistor. The device
behaves in QDR-I mode when the DLL is turned off. In this mode, the device operates at a frequency
of up to 167 MHz with QDR-I timing.
TDO
Output
TDO for JTAG
.
TCK
Input
TCK pin for JTAG
.
TDI
Input
TDI pin for JTAG
.
TMS
Input
TMS pin for JTAG
.
NC
N/A
Not connected to the die
. Can be tied to any voltage level.
NC/36M
N/A
Not connected to the die
. Can be tied to any voltage level.
NC/72M
N/A
Not connected to the die
. Can be tied to any voltage level.
NC
/144M
N/A
Not connected to the die
. Can be tied to any voltage level.
NC
/288M
N/A
Not connected to the die
. Can be tied to any voltage level.
V
REF
Input-
Reference
Reference Voltage Input
. Static input used to set the reference level for HSTL inputs, outputs, and
AC measurement points.
V
DD
Power Supply
Power supply inputs to the core of the device
.
V
SS
Ground
Ground for the device
.
V
DDQ
Power Supply
Power supply inputs for the outputs of the device
.
Pin Definitions
(continued)
Pin Name
IO
Pin Description
[+] Feedback
相關(guān)PDF資料
PDF描述
CY7C1176V18-333BZC 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1176V18-333BZI 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1176V18-333BZXC 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1176V18-333BZXI 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
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