參數(shù)資料
型號(hào)： CY7C1176V18-300BZC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類(lèi)： DRAM
英文描述： 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
中文描述： 2M X 9 QDR SRAM, 0.45 ns, PBGA165
封裝： 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FPBGA-165
文件頁(yè)數(shù)： 21/29頁(yè)
文件大?。?/td> 956K
代理商： CY7C1176V18-300BZC
CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
Document Number: 001-06582 Rev. *C
Page 21 of 29
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. User guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with Power Applied. –55°C to + 125°C
Supply Voltage on V
DD
Relative to GND.......–0.5V to + 2.9V
Supply Voltage on V
DDQ
Relative to GND..... –0.5V to + V
DD
DC Applied to Outputs in High Z ........–0.5V to V
DDQ
+ 0.3V
DC Input Voltage
[14]
...............................–0.5V to V
DD
+ 0.3V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V
Latch up Current.................................................... > 200 mA
Operating Range
Range
Ambient
Temperature (T
A
)
0°C to +70°C
–40°C to +85°C
V
DD
[18]
1.8 ± 0.1V
V
DDQ
[18]
1.4V to
V
DD
Commercial
Industrial
Electrical Characteristics
The DC Electrical Characteristics over the operating range follows.
[15]
Parameter
V
DD
V
DDQ
V
OH
V
OL
V
OH(LOW)
V
OL(LOW)
V
IH
V
IL
I
X
I
OZ
V
REF
I
DD
Description
Test Conditions
Min
1.7
1.4
Typ
1.8
1.5
Max
1.9
V
DD
Unit
V
V
V
V
V
V
V
V
μ
A
μ
A
V
mA
mA
mA
mA
mA
mA
mA
mA
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
[21]
V
DD
Operating Supply
Note 19
Note 20
I
OH
=
0.1 mA, Nominal Impedance
I
OL
= 0.1 mA, Nominal Impedance
V
DDQ
/2 – 0.12
V
DDQ
/2 – 0.12
V
DDQ
– 0.2
V
SS
V
REF
+ 0.1
–0.15
2
2
0.68
V
DDQ
/2 + 0.12
V
DDQ
/2 + 0.12
V
DDQ
0.2
V
DDQ
+ 0.15
V
REF
– 0.1
2
2
0.95
850
920
1020
1080
250
260
290
300
GND
≤
V
I
≤
V
DDQ
GND
≤
V
I
≤
V
DDQ,
Output Disabled
Typical Value = 0.75V
V
DD
= Max, I
OUT
= 0 mA,
f = f
max
= 1/t
CYC
0.75
300 MHz
333 MHz
375 MHz
400 MHz
300 MHz
333 MHz
375 MHz
400 MHz
I
SB1
Automatic Power Down
Current
Max V
DD
,
Both Ports Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
f = f
max
= 1/t
CYC
,
Inputs Static
AC Electrical Characteristics
Over the operating range follows.
[21]
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
V
IH
V
IL
Input HIGH Voltage
V
REF
+ 0.2
–0.24
–
V
DDQ
+ 0.24
V
REF
– 0.2
V
Input LOW Voltage
–
V
Notes
18.Power up: Is based upon a linear ramp from 0V to V
(min) within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.
19.Output are impedance controlled. I
OH
=
(V
DDQ
/2)/(RQ/5) for values of 175
< RQ < 350
.
20.Output are impedance controlled. I
= (V
/2)/(RQ/5) for values of 175
< RQ < 350
.
21.V
REF
(min) = 0.68V or 0.46V
DDQ
, whichever is larger, V
REF
(max) = 0.95V or 0.54V
DDQ
, whichever is smaller.
[+] Feedback
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