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參數(shù)資料
| 型號： | CY7C1148V18-375BZXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
| 中文描述： | 1M X 18 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 |
| 文件頁數(shù)： | 10/27頁 |
| 文件大?。?/td> | 969K |
| 代理商： | CY7C1148V18-375BZXC |
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CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
Document Number: 001-06621 Rev. *C
Page 10 of 27
Write Cycle Descriptions
The write cycle descriptions of CY7C1146V18 and CY7C1148V18 follows.
[3, 9]
BWS
0
/
NWS
0
BWS
1
/
NWS
1
K
K
Comments
L
L
L – H
–
When the Data portion of a write sequence is active
:
CY7C1146V18
both nibbles (D
[7:0]
) are written into the device,
CY7C1148V18
both bytes (D
[17:0]
) are written into the device.
L – H When the Data portion of a write sequence is active
:
CY7C1146V18
both nibbles (D
[7:0]
) are written into the device,
CY7C1148V18
both bytes (D
[17:0]
) are written into the device.
When the Data portion of a write sequence is active
:
CY7C1146V18
only the lower nibble (D
[3:0]
) is written into the device, D
[7:4]
remains unaltered.
CY7C1148V18
only the lower byte (D
[8:0]
) is written into the device, D
[17:9]
remains unaltered.
L – H When the Data portion of a write sequence is active
:
CY7C1146V18
only the lower nibble (D
[3:0]
) is written into the device, D
[7:4]
remains unaltered.
CY7C1148V18
only the lower byte (D
[8:0]
) is written into the device, D
[17:9]
remains unaltered.
L
L
–
L
H
L – H
–
L
H
–
H
L
L – H
–
When the Data portion of a write sequence is active:
CY7C1146V18
only the upper nibble (D
[7:4]
) is written into the device, D
[3:0]
remains unaltered.
CY7C1148V18
only the upper byte (D
[17:9]
) is written into the device, D
[8:0]
remains unaltered.
L – H When the Data portion of a write sequence is active
:
CY7C1146V18
only the upper nibble (D
[7:4]
) is written into the device, D
[3:0]
remains unaltered.
CY7C1148V18
only the upper byte (D
[17:9]
) is written into the device, D
[8:0]
remains unaltered.
H
L
–
H
H
L – H
–
No data is written into the devices when this portion of a write operation is active.
H
H
–
L – H No data is written into the devices when this portion of a write operation is active.
The write cycle descriptions of CY7C1146V18 follows.
[3, 9]
BWS
0
K
K
Comments
L
L – H
–
When the Data portion of a write sequence is active
,
the single byte (D
[8:0]
) is written into the device.
L
–
L – H
When the Data portion of a write sequence is active
,
the single byte (D
[8:0]
) is written into the device.
H
L – H
–
No data is written into the device when this portion of a write operation is active.
H
–
L – H
No data is written into the device when this portion of a write operation is active.
Note
9. Is based on a Write cycle was initiated in accordance with the Write Cycle Description Truth Table. Alter BWS
0
, BWS
1
, BWS
2
,
and BWS
3
on different portions of a Write
cycle, as long as the setup and hold requirements are achieved.
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| CY7C11501KV18-400BZXC | 功能描述:IC SRAM 18MBIT 400MHZ 165-FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF) |
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| CY7C1150KV18-400BZC | 功能描述:靜態(tài)隨機存取存儲器 18MB (512Kx36) 1.8v 400MHz DDR II 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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| CY7C1150KV18-400BZXI | 功能描述:靜態(tài)隨機存取存儲器 18MB (512Kx36) 1.8v 400MHz DDR II 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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