- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380182 > CY7C1049BNV33-12VI (CYPRESS SEMICONDUCTOR CORP) 512K x 8 Static RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | CY7C1049BNV33-12VI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 512K x 8 Static RAM |
| 中文描述： | 512K X 8 STANDARD SRAM, 12 ns, PDSO36 |
| 封裝： | 0.400 INCH, SOJ-36 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 420K |
| 代理商： | CY7C1049BNV33-12VI |
CY7C1049BNV33
Document #: 001-06432 Rev. **
Page 5 of 8
Write Cycle No. 1 (WE Controlled, OE HIGH During Write)
[15, 16]
Write Cycle No. 2 (WE Controlled, OE LOW)
[16]
Truth Table
CE
OE
WE
I/O
0
– I/O
7
Mode
Power
H
X
X
High Z
Power-Down
Standby (I
SB
)
Active (I
CC
)
Active (I
CC
)
Active (I
CC
)
L
L
H
Data Out
Read
L
X
L
Data In
Write
L
H
H
High Z
Selected, Outputs Disabled
Notes:
15.Data I/O is high-impedance if OE = V
.
16.If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
17.During this period the I/Os are in the output state and input signals should not be applied.
Switching Waveforms
(continued)
t
HD
t
SD
t
PWE
t
SA
t
HA
t
AW
t
SCE
t
WC
t
HZOE
DATA
IN
VALID
CE
ADDRESS
WE
DATA I/O
OE
NOTE
17
DATA VALID
t
HD
t
SD
t
LZWE
t
PWE
t
SA
t
HA
t
AW
t
SCE
t
WC
t
HZWE
CE
ADDRESS
WE
DATA I/O
NOTE
17
[+] Feedback
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1049BNV33-12VXC | 512K x 8 Static RAM |
| CY7C1049BNV33-12VXI | 512K x 8 Static RAM |
| CY7C1049BNV33-12ZC | 512K x 8 Static RAM |
| CY7C1049BNV33-15VC | 512K x 8 Static RAM |
| CY7C1049BNV33-15VI | 512K x 8 Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1049BNV33-12VXC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1049BNV33-15VXI | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1049BNV33-15ZC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1049BNV33-15ZI | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1049BNV33L-15VXC | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。