參數(shù)資料
型號(hào)： CY7C1049BNV33-12VI
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 512K x 8 Static RAM
中文描述： 512K X 8 STANDARD SRAM, 12 ns, PDSO36
封裝： 0.400 INCH, SOJ-36
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 420K
代理商： CY7C1049BNV33-12VI
CY7C1049BNV33
Document #: 001-06432 Rev. **
Page 2 of 8
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................–55
°
C to +125
°
C
Supply Voltage on V
CC
to Relative GND
[2]
.....–0.5V to +4.6V
DC Voltage Applied to Outputs
[2]
in High Z State .......................................–0.5V to V
CC
+ 0.5V
DC Electrical Characteristics
Over the Operating Range
DC Input Voltage
[2]
................................–0.5V to V
CC
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Selection Guide
-12
12
200
220
8
0.5
-15
15
180
200
8
0.5
-20
20
160
170
8
0.5
Maximum Access Time (ns)
Maximum Operating Current (mA)
Com’l
Ind’l
Com’l/Ind’l
Com’l
Maximum CMOS Standby Current (mA)
L
Operating Range
Range
Ambient
Temperature
0
°
C to +70
°
C
–40
°
C to +85
°
C
V
CC
Commercial
Industrial
3.3V
±
0.3V
Parameter
V
OH
Description
Output HIGH
Voltage
Output LOW Voltage V
CC
= Min.,
Test Conditions
V
CC
= Min.,
I
OH
= –4.0 mA
-12
-15
-20
Min.
2.4
Max.
Min.
2.4
Max.
Min.
2.4
Max.
Unit
V
V
OL
I
OL
= 8.0 mA
0.4
0.4
0.4
V
V
IH
V
IL
I
IX
Input HIGH Voltage
Input LOW Voltage
[2]
Input Leakage
Current
Output Leakage
Current
V
CC
Operating
Supply Current
2.2
–0.5
–1
V
CC
+ 0.5
0.8
+1
2.2
–0.5
–1
V
CC
+ 0.5
0.8
+1
2.2
–0.5
–1
V
CC
+ 0.5
0.8
+1
V
V
μ
A
GND < V
I
< V
CC
I
OZ
GND < V
OUT
< V
CC
,
Output Disabled
V
CC
= Max.,
f = f
MAX
= 1/t
RC
–1
+1
–1
+1
–1
+1
μ
A
I
CC
Com’l
Ind’l
200
220
30
180
200
30
160
170
30
mA
mA
mA
I
SB1
Automatic CE
Power-Down
Current
—TTL Inputs
Automatic CE
Power-Down
Current
—CMOS Inputs
Max. V
CC
, CE > V
IH
V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
I
SB2
Max. V
CC
,
CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V,
or V
IN
< 0.3V, f = 0
Com’l/Ind’l
Com’l
8
8
8
mA
mA
L
0.5
0.5
0.5
Capacitance
[3]
Parameter
Description
Test Conditions
Max.
8
Unit
pF
C
IN
Input Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 3.3V
C
OUT
Notes:
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
2. V
(min.) = –2.0V for pulse durations of less than 20 ns.
3. Tested initially and after any design or process changes that may affect these parameters.
I/O Capacitance
8
pF
[+] Feedback
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