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參數(shù)資料
| 型號： | CY7C1019B |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 128K x 8 Static RAM(128K x 8靜態(tài)RAM) |
| 中文描述： | 128K的× 8靜態(tài)RAM（128K的× 8靜態(tài)RAM）的 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 314K |
| 代理商： | CY7C1019B |
128K x 8 Static RAM
CY7C1019B
Cypress Semiconductor Corporation
Document #: 38-05026 Rev. *C
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised August 3, 2006
Features
High speed
— t
AA
= 12 ns
CMOS for optimum speed/power
Center power/ground pinout
Automatic power-down when deselected
Easy memory expansion with CE
and OE options
Functionally equivalent to CY7C1019
Available in Pb-free and non Pb-free 32-pin TSOP II, non
Pb-free 400-mil-wide SOJ packages.
Functional Description
The CY7C1019B is a high-performance CMOS static RAM
organized as 131,072 words by 8 bits. Easy memory
Logic Block Diagram
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and tri-state drivers. This
device has an automatic power-down feature that significantly
reduces power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O
0
through I/O
7
) is then written into the location
specified on the address pins (A
0
through A
16
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
1
A
1
A
Pin Configurations
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
COLUMN
DECODER
R
S
INPUT BUFFER
POWER
DOWN
WE
OE
I/O
0
I/O
1
I/O
2
I/O
3
128K x 8
ARRAY
I/O
7
I/O
6
I/O
5
I/O
4
A
0
A
1
A
1
A
1
A
1
CE
A
1
A
9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
19
18
20
24
23
22
21
25
28
27
26
Top View
SOJ
29
32
31
30
16
17
A
7
A
1
A
2
A
3
CE
I/O
0
I/O
1
V
CC
V
SS
A
13
OE
I/O
7
I/O
6
V
SS
A
16
A
15
A
14
A
12
A
11
A
10
A
9
A
8
I/O
2
I/O
3
WE
A
0
A
4
A
5
A
6
I/O
4
V
CC
I/O
5
/TSOPII
Selection Guide
-12
12
140
10
-15
15
130
10
Unit
ns
mA
mA
Maximum Access Time
Maximum Operating Current
Maximum Standby Current
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1019DV33 | 1-Mbit (128K x 8) Static RAM(1Mbit (128K x 8)靜態(tài)RAM) |
| CY7C1019D | 1-Mbit (128K x 8) Static RAM(1Mbit (128K x 8)靜態(tài)RAM) |
| CY7C1019 | 128K x 8 Static RAM(128K x 8 靜態(tài) RAM) |
| CY7C1020B | 32K x 16 Static RAM |
| CY7C1020BL-12VC | 32K x 16 Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1019B-10VC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1019B-10VCT | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1019B-12VC | 功能描述:IC SRAM 1MBIT 12NS 32SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| CY7C1019B-12ZXC | 功能描述:IC SRAM 1MBIT 12NS 32TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| CY7C1019B-12ZXCT | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
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