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參數(shù)資料
| 型號： | CY7C1019D |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 1-Mbit (128K x 8) Static RAM(1Mbit (128K x 8)靜態(tài)RAM) |
| 中文描述： | 1兆位（128K的× 8）靜態(tài)隨機存儲器（容量為1Mbit（128K的× 8）靜態(tài)的RAM） |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 314K |
| 代理商： | CY7C1019D |
CY7C1019D
1-Mbit (128K x 8) Static RAM
Cypress Semiconductor Corporation
Document #: 38-05464 Rev. *E
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised February 22, 2007
Features
Pin- and function-compatible with CY7C1019B
High speed
— t
AA
= 10 ns
Low active power
— I
CC
= 80 mA @ 10 ns
Low CMOS standby power
— I
SB2
= 3 mA
2.0V Data retention
Automatic power-down when deselected
CMOS for optimum speed/power
Center power/ground pinout
Easy memory expansion with CE
and OE options
Functionally equivalent to CY7C1019B
Available in Pb-free 32-pin 400-Mil wide Molded SOJ and
32-pin TSOP II packages
Functional Description
[1]
The CY7C1019D is a high-performance CMOS static RAM
organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and tri-state drivers. This
device has an automatic power-down feature that significantly
reduces power consumption when deselected. The eight input
and output pins (IO
0
through IO
7
) are placed in a
high-impedance state when:
Deselected (CE HIGH)
Outputs are disabled (OE HIGH)
When the write operation is active (CE LOW, and WE LOW).
Write to the device by taking Chip Enable (CE) and Write
Enable (WE) inputs LOW. Data on the eight IO pins (IO
0
through IO
7
) is then written into the location specified on the
address pins (A
0
through A
16
).
Read from the device by taking Chip Enable (CE) and Output
Enable (OE) LOW while forcing Write Enable (WE) HIGH.
Under these conditions, the contents of the memory location
specified by the address pins appears on the IO pins.
Logic Block Diagram
A0
A1
A2
A3
A4
A5
A6
A7
A8
IO0
IO7
IO1
IO2
IO3
IO4
IO5
IO6
A9
S
POWER
DOWN
CE
WE
OE
A1
A1
A1
A1
A1
R
COLUMN DECODER
128K x 8
ARRAY
INPUT BUFFER
A1
A1
Note
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at
www.cypress.com
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1019 | 128K x 8 Static RAM(128K x 8 靜態(tài) RAM) |
| CY7C1020B | 32K x 16 Static RAM |
| CY7C1020BL-12VC | 32K x 16 Static RAM |
| CY7C1020BL-12ZC | 32K x 16 Static RAM |
| CY7C1020B-12VC | 32K x 16 Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1019D-10VXI | 功能描述:靜態(tài)隨機存取存儲器 1M 512K IND FAST ASYNC 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1019D-10VXIT | 功能描述:靜態(tài)隨機存取存儲器 1M 512K IND FAST ASYNC 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1019D-10ZSXI | 功能描述:靜態(tài)隨機存取存儲器 1M 512K IND FAST ASYNC 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1019D-10ZSXIT | 功能描述:靜態(tài)隨機存取存儲器 1M 512K IND FAST ASYNC 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1019DV3310BVXI | 制造商:Cypress Semiconductor 功能描述: |
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