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參數資料
| 型號： | CY7C1020B |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 32K x 16 Static RAM |
| 中文描述： | 32K的× 16靜態(tài)RAM |
| 文件頁數： | 1/10頁 |
| 文件大小： | 180K |
| 代理商： | CY7C1020B |
32K x 16 Static RAM
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
1
through I/O
8
), is
written into the location specified on the address pins (A
0
through A
15
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
9
through I/O
16
) is written into the location
specified on the address pins (A
0
through A
15
).
Reading from the device is accomplished by taking Chip En-
able (CE) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then
data from the memory location specified by the address pins
will appear on I/O
1
to I/O
8
. If Byte High Enable (BHE) is LOW,
then data from memory will appear on I/O
9
to I/O
16
. See the
truth table at the back of this data sheet for a complete descrip-
tion of read and write modes.
The input/output pins (I/O
1
through I/O
16
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
The CY7C1020B is available in standard 44-pin TSOP Type II
and 400-mil-wide SOJ packages.
CY7C1020B
Cypress Semiconductor Corporation
Document #: 38-05171 Rev. *A
3901 North First Street
San Jose
CA 95134
408-943-2600
Revised August 20, 2002
020B
Features
High speed
—t
AA
= 12, 15 ns
CMOS for optimum speed/power
Low active power
—825 mW (max.)
Low CMOS standby power (L version only)
—2.75 mW (max.)
Automatic power-down when deselected
Independent control of upper and lower bits
Available in 44-pin TSOP II and 400-mil SOJ
Functional Description
The CY7C1020B is a high-performance CMOS static RAM or-
ganized as 32,768 words by 16 bits. This device has an auto-
matic power-down feature that significantly reduces power
consumption when deselected.
WE
A
15
A
14
A
13
A
NC
Logic Block Diagram
Pin Configuration
SOJ / TSOP II
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
31
30
32
36
35
34
33
37
40
39
38
Top View
41
44
43
42
16
17
29
28
V
CC
V
SS
I/O
5
I/O
6
NC
A
3
A
2
A
1
A
0
OE
BHE
BLE
V
SS
V
CC
I/O
12
I/O
11
I/O
10
I/O
9
A
5
A
6
A
7
I/O
16
I/O
15
I/O
14
I/O
13
CE
I/O
1
I/O
2
I/O
3
I/O
4
NC
A
8
A
9
A
10
A
11
18
19
20
21
27
26
25
24
22
23
NC
I/O
7
I/O
8
32K x 16
RAM Array
I/O
1
–
I/O
8
R
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
COLUMN DECODER
A
9
A
1
A
1
A
1
A
1
A
1
S
DATA IN DRIVERS
BLE
I/O
9
–
I/O
16
OE
WE
A
8
Selection Guide
7C1020B-12
12
140
3
0.5
7C1020B-15
15
130
3
0.5
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current (mA)
Commercial
Commercial
Commercial
L
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相關代理商/技術參數 |
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| CY7C1020B-12VC | 制造商:Rochester Electronics LLC 功能描述:512K (32K X 16)- FAST ASYNCH SRAM - Bulk |
| CY7C1020B-12VXC | 功能描述:IC SRAM 512KBIT 12NS 44SOJ RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1020B-12VXCT | 功能描述:IC SRAM 512KBIT 12NS 44SOJ RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1020B-12ZC | 制造商:Rochester Electronics LLC 功能描述:512K (32K X 16)- FAST ASYNCH SRAM - Bulk |
| CY7C1020B-12ZXC | 功能描述:IC SRAM 512KBIT 12NS 44TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
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