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參數(shù)資料
| 型號： | CY62167E |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | Replacement for National Semiconductor part number 9328FMQB. Buy from authorized manufacturer Rochester Electronics. |
| 中文描述： | 16兆位（1米× 16 / 2米× 8）靜態(tài)RAM |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 441K |
| 代理商： | CY62167E |
CY62167E MoBL
Document #: 001-15607 Rev. *A
Page 3 of 12
Maximum Ratings
Exceeding the maximum ratings may shorten the battery life
of the device. User guidelines are not tested.
Storage Temperature ................................–65°C to + 150°C
Ambient Temperature with
Power Applied............................................–55°C to + 125°C
Supply Voltage to Ground
Potential........................................................... –0.5V to 6.0V
DC Voltage Applied to Outputs
in High-Z State
[5, 6]
........................................... –0.5V to 6.0V
DC Input Voltage
[5, 6]
........................................–0.5V to 6.0V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage........................................... >2001V
(MIL-STD-883, Method 3015)
Latch Up Current.....................................................>200 mA
Operating Range
Device
Range
Ambient
Temperature
V
CC
[7]
CY62167ELL
Industrial –40°C to +85°C 4.5V to 5.5V
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
45 ns
Unit
Min
Typ
[4]
Max
V
OH
Output HIGH Voltage
I
OH
= –1.0 mA
2.4
V
V
OL
Output LOW Voltage
I
OL
= 2.1mA
0.4
V
V
IH
Input HIGH Voltage
V
CC
= 4.5V to 5.5V
2.2
V
CC
+ 0.5V
0.7
[8]
V
V
IL
Input LOW Voltage
V
CC
= 4.5V to 5.5V
–0.5
V
I
IX
Input Leakage Current
GND < V
I
< V
CC
–1
+1
μ
A
I
OZ
Output Leakage Current
GND < V
O
< V
CC
, Output Disabled
–1
+1
μ
A
I
CC
V
CC
Operating Supply
Current
f = f
MAX
= 1/t
RC
V
CC
= V
CC
(max)
I
OUT
= 0 mA
CMOS levels
25
30
mA
f = 1 MHz
2.2
4.0
mA
I
SB2[9]
Automatic CE Power Down
Current—CMOS Inputs
CE
1
> V
CC
– 0.2V or CE
2
< 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= V
CC(max)
1.5
12
μ
A
Capacitance
[10]
Parameter
C
IN
C
OUT
Description
Test Conditions
Max
10
10
Unit
pF
pF
Input Capacitance
Output Capacitance
T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
Thermal Resistance
[10]
Parameter
Θ
JA
Description
Test Conditions
TSOP I
60
Unit
°
C/W
Thermal Resistance
(junction to ambient)
Thermal Resistance
(junction to case)
Still air, soldered on a 3 × 4.5 inch, two-layer printed circuit
board
Θ
JC
4.3
°
C/W
Notes
5. V
IL
(min) = –2.0V for pulse durations less than 20 ns.
6. V
(max) = V
+ 0.75V for pulse durations less than 20 ns.
7. Full Device AC operation is based on a 100
μ
s ramp time from 0 to V
(min) and 200
μ
s wait time after V
stabilization.
8. Under DC conditions the device meets a V
IL
of 0.8V. However, in dynamic conditions Input LOW Voltage applied to the device must not be higher than 0.7V.
9. Only chip enables (CE
1
and CE
2
), byte enables (BHE and BLE) and BYTE need to be tied to CMOS levels to meet the I
SB2
/ I
CCDR
spec. Other inputs can be
left floating.
10.Tested initially and after any design or process changes that may affect these parameters.
[+] Feedback
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| CY62167ELL-45XZI | 制造商:Cypress Semiconductor 功能描述: |
| CY62167ELL-45ZXI | 功能描述:靜態(tài)隨機(jī)存取存儲器 SLo 5.0V ULTRA LoPwr 32Kx8 PbFree 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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| CY62167EV18LL-558VXI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY62167EV18LL-55BAXI | 功能描述:靜態(tài)隨機(jī)存取存儲器 16Mbit 靜態(tài)隨機(jī)存取存儲器 55ns 1.8V CMOS RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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