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參數(shù)資料
| 型號(hào)： | CY62157EV18 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 8-Mbit (512K x 16) Static RAM |
| 中文描述： | 8兆位（為512k × 16）靜態(tài)RAM |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 414K |
| 代理商： | CY62157EV18 |
CY62157EV18 MoBL
Document #: 38-05490 Rev. *D
Page 5 of 12
Switching Characteristics
(Over the Operating Range)
[11, 12]
Parameter
Description
55 ns
Unit
Min
Max
Read Cycle
t
RC
t
AA
t
OHA
Read Cycle Time
55
ns
Address to Data Valid
55
ns
Data Hold from Address Change
10
ns
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
t
DBE
t
LZBE [15]
t
HZBE
Write Cycle
[16]
CE
1
LOW and CE
2
HIGH to Data Valid
OE LOW to Data Valid
OE LOW to Low-Z
[13]
OE HIGH to High-Z
[13, 14]
CE
1
LOW and CE
2
HIGH to Low-Z
[13]
CE
1
HIGH and CE
2
LOW to High-Z
[13, 14]
CE
1
LOW and CE
2
HIGH to Power Up
CE
1
HIGH and CE
2
LOW to Power Down
BLE/BHE LOW to Data Valid
BLE/BHE LOW to Low-Z
[13]
BLE/BHE HIGH to High-Z
[13, 14]
55
ns
25
ns
5
ns
18
ns
10
ns
18
ns
0
ns
55
ns
55
ns
10
ns
18
ns
t
WC
Write Cycle Time
45
ns
t
SCE
t
AW
t
HA
t
SA
CE
1
LOW and CE
2
HIGH
to Write End
Address Setup to Write End
35
ns
35
ns
Address Hold from Write End
0
ns
Address Setup to Write Start
0
ns
t
PWE
t
BW
t
SD
t
HD
WE Pulse Width
35
ns
BLE/BHE LOW to Write End
35
ns
Data Setup to Write End
25
ns
Data Hold from Write End
0
ns
t
HZWE
t
LZWE
WE LOW to High-Z
[13, 14]
WE HIGH to Low-Z
[13]
18
ns
10
ns
Notes
11. Test conditions for all parameters other than tri-state parameters assume signal transition time of 1V/ns or less, timing reference levels of V
CC(typ)
/2, input pulse
levels of 0 to V
CC(typ)
, and output loading of the specified I
OL
/I
OH
as shown in the
“AC Test Loads and Waveforms” on page 4
.
12.AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. Please see application note AN13842 for further
clarification.
13.At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZBE
is less than t
LZBE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any
given device.
14.t
HZOE
, t
HZCE
, t
HZBE
, and t
HZWE
transitions are measured when the output enters a high impedance state.
15.If both byte enables are toggled together, this value is 10 ns.
16.The internal write time of the memory is defined by the overlap of WE, CE
= V
IL
, BHE and/or BLE = V
IL
, and CE
2
= V
IH
. All signals must be ACTIVE to initiate a
write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that
terminates the write.
[+] Feedback
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