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參數(shù)資料
| 型號： | CY62157EV18 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 8-Mbit (512K x 16) Static RAM |
| 中文描述： | 8兆位（為512k × 16）靜態(tài)RAM |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 414K |
| 代理商： | CY62157EV18 |
CY62157EV18 MoBL
Document #: 38-05490 Rev. *D
Page 11 of 12
Document History
Document Title: CY62157EV18 MoBL
8-Mbit (512K x 16) Static RAM
Document Number:38-05490
REV. ECN NO. Issue DateChange
**
202862
See ECN
AJU
*A
291272
See ECN
SYT
Description of Change
New Data Sheet
Converted from Advance Information to Preliminary
Changed V
CC
Max from 2.20 to 2.25 V
Changed V
CC
stabilization time in footnote #7 from 100
μ
s to 200
μ
s
Changed I
CCDR
from 4 to 4.5
μ
A
Changed t
OHA
from 6 ns to 10 ns for both 35 ns and 45 ns Speed Bins
Changed t
DOE
from 15 and 22 ns to 18 and 22 ns for the 35 and 45 ns Speed Bins
respectively
Changed t
HZOE
, t
HZBE
and t
HZWE
from 12 and 15 ns to 15 and 18 ns for the 35 and 45
ns Speed Bins respectively
Changed t
HZCE
from 12 and 15 ns to 18 and 22 ns for the 35 and 45 ns Speed Bins
respectively
Changed t
SCE
, t
AW,
and t
BW
from 25 and 40 ns to 30 and 35 ns for the 35 and 45 ns
Speed Bins respectively
Changed t
SD
from 15 and 20 ns to 18 and 22 ns for the 35 and 45 ns Speed Bins
respectively
Added Pb-Free Package Information
Converted from Preliminary to Final
Removed 35 ns speed bin
Removed “L” bin
Changed ball E3 from DNU to NC
Removed redundant footnote on DNU
Modified Maximum Ratings spec for Supply Voltage and DC Input Voltage from 2.4V to
2.45V
Changed the I
CC
Typ value from 16 mA to 18 mA and I
CC
Max value from 28 mA to 25
mA for test condition f = fax = 1/t
RC
Changed the I
CC
Max value from 2.3 mA to 3 mA for test condition f = 1MHz
Changed the I
SB1
and
I
SB2
Max value from 4.5
μ
A to 8
μ
A and Typ value from 0.9
μ
A
to 2
μ
A respectively
Updated Thermal Resistance table
Changed Test Load Capacitance from 50 pF to 30 pF
Added Typ value for I
CCDR
Changed the I
CCDR
Max value from 4.5
μ
A to 3
μ
A
Corrected t
R
in Data Retention Characteristics from 100
μ
s to t
RC
ns
Changed t
LZOE
from 3 to 5
Changed t
LZCE
from 6 to 10
Changed t
HZCE
from 22 to 18
Changed t
LZBE
from 6 to 5
Changed t
PWE
from 30 to 35
Changed t
SD
from 22 to 25
Changed t
LZWE
from 6 to 10
Added footnote #13
Updated the ordering Information and replaced the Package Name column with
Package Diagram
Replaced 45ns speed bin with 55ns
*B
444306
See ECN
NXR
*C
571786
See ECN
VKN
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| CY62157EV18LL-55BVXI | 8-Mbit (512K x 16) Static RAM |
| CY62157EV30 | 8-Mbit (512K x 16) Static RAM |
| CY62157EV30LL-45BVI | 8-Mbit (512K x 16) Static RAM |
| CY62157EV30LL-45BVXA | 8-Mbit (512K x 16) Static RAM |
| CY62157EV30LL-45BVXI | 8-Mbit (512K x 16) Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY62157EV18LL-45BVXI | 功能描述:IC SRAM 8MBIT 45NS 48VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MoBL® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY62157EV18LL-45BVXIT | 功能描述:IC SRAM 8MBIT 45NS 48VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MoBL® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY62157EV18LL-55BVXI | 功能描述:靜態(tài)隨機(jī)存取存儲器 8M MOBL ULTRA Lo PWR HI SPD ASYNC 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62157EV18LL-55BVXIT | 功能描述:靜態(tài)隨機(jī)存取存儲器 8M MOBL ULTRA Lo PWR HI SPD ASYNC 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62157EV18LL-55IKA | 制造商:Cypress Semiconductor 功能描述: |
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