
CY62157DV30 MoBL
Document #: 38-05392 Rev. *H
Page 3 of 12
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................–65°C to + 150°C
Ambient Temperature with
Power Applied............................................–55°C to + 125°C
Supply Voltage to Ground
Potential............................................–0.3V to V
CC(max)
+ 0.3V
DC Voltage Applied to Outputs
in High-Z State
[8, 9]
............................–0.3V to V
CC(max)
+ 0.3V
DC Input Voltage
[8, 9]
........................–0.3V to V
CC(max)
+ 0.3V
Output Current into Outputs (LOW) .............................20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current......................................................>200 mA
Operating Range
Device
Range
Industrial
Ambient
Temperature
(T
A
)
–40°C to +85°C 2.20V
V
CC
[10]
CY62157DV30L
CY62157DV30LL
CY62157DV30LL Automotive-A –40°C to +85°C
CY62157DV30L
Automotive-E –40°C to +125°C
to
3.60V
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
Description
Output HIGH
Voltage
Test Conditions
-45, -55, -70
Typ.
[2]
Unit
V
V
V
V
V
V
V
V
μ
A
Min.
2.0
2.4
Max.
I
OH
= –0.1 mA
I
OH
= –1.0 mA
I
OL
= 0.1 mA
I
OL
= 2.1 mA
V
CC
= 2.2V to 2.7V
V
CC
= 2.7V to 3.6V
V
CC
= 2.2V to 2.7V
V
CC
= 2.7V to 3.6V
GND < V
I
< V
CC
V
CC
= 2.20V
V
CC
= 2.70V
V
CC
= 2.20V
V
CC
= 2.70V
V
OL
Output LOW
Voltage
0.4
0.4
V
IH
Input HIGH
Voltage
1.8
2.2
–0.3
–0.3
–1
V
CC
+ 0.3
V
CC
+ 0.3
0.6
0.8
+1
V
IL
Input LOW
Voltage
I
IX
Input Leakage
Current
Ind’l/Auto-A
[7]
Auto-E
[7]
Ind’l/Auto-A
[7]
Auto-E
[7]
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
–4
+4
μ
A
I
OZ
Output Leakage
Current
GND < V
O
< V
CC
, Output Disabled
–1
+1
μ
A
–4
+4
μ
A
I
CC
V
CC
Operating
Supply Current
f = f
MAX
= 1/t
RC
L
LL
L
LL
L
12
12
1.5
1.5
2
2
20
15
3
3
20
8
mA
mA
mA
mA
μ
A
f = 1 MHz
I
SB1
Automatic CE
Power-Down
Current — CMOS
Inputs
CE
1
> V
CC
0.2V, CE
2
< 0.2V
V
IN
> V
CC
– 0.2V, V
IN
< 0.2V)
f = f
MAX
(Address and Data Only), f = 0
(OE, WE, BHE and BLE), V
CC
= 3.60V
CE
1
> V
CC
– 0.2V or CE
2
< 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= 3.60V
Ind’l
Ind’l/Auto-A
[7]
LL
Auto-E
[7]
L
L
50
20
I
SB2
Automatic CE
Power-Down
Current -CMOS
Inputs
Ind’l
[7]
Ind’l/Auto-A
[7]
LL
Auto-E
[7]
2
μ
A
2
8
L
50
Capacitance
[11, 12]
Parameter
Description
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
Max.
10
10
Unit
pF
pF
C
IN
C
OUT
Notes:
7. Automotive-A and Automotive-E available only in -55.
8. V
IL(min.)
= –2.0V for pulse durations less than 20 ns.
9. V
= V
+0.75V for pulse duration less than 20 ns.
10.Full device AC operation assumes a 100
μ
s ramp time from 0 to V
(min) and 200
μ
s wait time after V
CC
stabilization.
11. Tested initially and after any design or process changes that may affect these parameters.
12.The input capacitance on the CE
2
pin of the FBGA and 48TSOPI packages and on the BHE pin of the 44TSOPII package is 15 pF.
Input Capacitance
Output Capacitance