參數(shù)資料
型號： CY62157DV30
廠商： Cypress Semiconductor Corp.
英文描述： 8-Mbit (512K x 16) MoBL Static RAM(8-Mb(512K x 16) MoBL靜態(tài)RAM)
中文描述： 8兆位（為512k × 16）的MoBL靜態(tài)RAM（8 MB的（為512k × 16）的MoBL靜態(tài)內(nèi)存）
文件頁數(shù)： 2/12頁
文件大?。?/td> 577K
代理商： CY62157DV30
CY62157DV30 MoBL
Document #: 38-05392 Rev. *H
Page 2 of 12
Product Portfolio
Notes:
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ.)
, T
A
= 25°C.
3. NC pins are not internally connected on the die.
4. DNU pins have to be left floating.
5. The BYTE pin in the 48-TSOPI package has to be tied HIGH to use the device as a 512K × 16 SRAM. The 48-TSOPI package can also be used as a 1M × 8
SRAM by tying the BYTE signal LOW. For 1M × 8 Functionality, please refer to the CY62158DV30 datasheet. In the 1M × 8 configuration, Pin 45 is A19, while
BHE, BLE and I/O8 to I/O14 pins are not used.
6. The 44-TSOPII package device has only one chip enable pin (CE).
Product
Range
V
CC
Range (V)
Min.
Typ.
[2]
2.2
2.2
2.2
2.2
Speed
(ns)
45, 55, 70
45, 55, 70
55
55
Power Dissipation
Operating I
CC
, (mA)
f = 1MHz
Typ.
[2]
Max.
Typ.
[2]
1.5
3
1.5
3
1.5
3
1.5
3
Standby I
SB2
,
(
μ
A)
Typ.
[2]
2
2
2
2
f = f
max
Max.
3.6
3.6
3.6
3.6
Max.
20
15
15
20
Max.
20
8
8
50
CY62157DV30L
CY62157DV30LL Industrial
CY62157DV30LL Automotive-A
CY62157DV30L
Industrial
3.0
3.0
3.0
3.0
12
12
12
12
Automotive-E
Pin Configuration
[4, 5, 6]
48-Pin TSOP I Pinout
Top View
48-Ball FBGA Pinout
Top View
44-pin TSOP II Pinout
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A15
A14
A13
A12
A11
A10
A9
A8
NC
DNU
WE
CE2
DNU
BHE
BLE
A18
A17
A7
A6
A5
A4
A3
A2
A1
A16
BYTE
Vss
I/O15/A19
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
Vcc
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
Vss
CE1
A0
WE
A
18
A
17
A
16
A
15
A
14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
31
30
32
36
35
34
33
37
40
39
38
41
44
43
42
16
17
29
28
V
CC
V
SS
I/O
4
I/O
5
A
4
A
3
A
2
A
1
A
0
OE
BHE
BLE
V
SS
V
CC
I/O
11
I/O
10
I/O
9
I/O
8
A
8
A
5
A
6
A
7
I/O
15
I/O
14
I/O
13
I/O
12
CE
I/O
0
I/O
1
I/O
2
I/O
3
18
19
20
21
27
26
25
24
22
23
I/O
6
I/O
7
A
9
A
10
A
11
A
12
A
13
WE
A
11
A
10
A
6
A
0
A
3
CE
1
I/O
10
I/O
8
I/O
9
A
4
A
5
I/O
11
I/O
13
I/O
12
I/O
14
I/O
15
V
SS
A
9
A
8
OE
Vss
A
7
I/O
0
BHE
CE
2
A
17
A
2
A
1
BLE
V
CC
I/O
2
I/O
1
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
A
15
A
14
A
13
A
12
NC
A
18
NC
3
2
6
5
4
1
D
E
B
A
C
F
G
H
A
16
DNU
Vcc
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY62157DV30L-45BVI 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY62157DV30L-55BVI 制造商:Cypress Semiconductor 功能描述:
CY62157DV30L-55BVXE 功能描述:靜態(tài)隨機存取存儲器 SLO 3.0V SUPER LO PWR 512KX16 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62157DV30L-55BVXET 功能描述:靜態(tài)隨機存取存儲器 SLO 3.0V SUPER LO PWR 512KX16 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62157DV30L-55ZSI 制造商:Rochester Electronics LLC 功能描述:8MB (512KX16) SRAM SLOW 3.0V LOW POWER - Bulk
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