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參數(shù)資料
| 型號(hào)： | CY62147DV30L-70BVI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 4-Mbit (256K x 16) Static RAM |
| 中文描述： | 256K X 16 STANDARD SRAM, 70 ns, PBGA48 |
| 封裝： | 6 X 8 MM, 1 MM HEIGHT, VFBGA-48 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 418K |
| 代理商： | CY62147DV30L-70BVI |
CY62147DV30
Document #: 38-05340 Rev. *D
Page 7 of 12
Write Cycle No. 1 (WE Controlled)
[16, 20, 21]
Write Cycle No. 2 (CE
Controlled)
[16, 20, 21]
Notes:
20.Data I/O is high impedance if OE = V
.
21.If CE goes HIGH simultaneously with WE = V
, the output remains in a high-impedance state.
22.During this period, the I/Os are in output state and input signals should not be applied.
Switching Waveforms
(continued)
t
HD
t
SD
t
PWE
t
SA
t
HA
t
AW
t
WC
DATA I/O
ADDRESS
CE
WE
OE
t
HZOE
DATA
IN
NOTE
22
BHE/BLE
t
BW
t
SCE
t
HD
t
SD
t
PWE
t
HA
t
AW
t
SCE
t
WC
t
HZOE
DATA
IN
CE
ADDRESS
WE
DATA I/O
OE
NOTE 22
BHE/BLE
t
BW
t
SA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY62147DV30L-70BVXI | 4-Mbit (256K x 16) Static RAM |
| CY62147DV30L-70ZSXI | 4-Mbit (256K x 16) Static RAM |
| CY62147DV30LL | 4-Mbit (256K x 16) Static RAM |
| CY62147DV30LL-45BVI | 4-Mbit (256K x 16) Static RAM |
| CY62147DV30LL-70BVXI | 4-Mbit (256K x 16) Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY62147DV30L-70BVXI | 制造商:Cypress Semiconductor 功能描述: |
| CY62147DV30L-70ZSI | 制造商:Cypress Semiconductor 功能描述:4MB (256K X 16) 3.0V LOW POWER SLOW SRAM - Bulk |
| CY62147DV30L-70ZSXI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY62147DV30LL | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (256K x 16) Static RAM |
| CY62147DV30LL-45BVI | 制造商:Cypress Semiconductor 功能描述:SRAM ASYNC SGL 2.5V/3.3V 4MBIT 256KX16 45NS 48VFBGA - Bulk |
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