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參數(shù)資料
| 型號(hào)： | CY62147DV30L-70BVI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 4-Mbit (256K x 16) Static RAM |
| 中文描述： | 256K X 16 STANDARD SRAM, 70 ns, PBGA48 |
| 封裝： | 6 X 8 MM, 1 MM HEIGHT, VFBGA-48 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 418K |
| 代理商： | CY62147DV30L-70BVI |
CY62147DV30
Document #: 38-05340 Rev. *D
Page 3 of 12
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground
Potential......................................–0.3V to + V
CC(MAX)
+ 0.3V
DC Voltage Applied to Outputs
in High-Z State
[6,7]
..........................–0.3V to V
CC(MAX)
+ 0.3V
DC Input Voltage
[6,7]
......................–0.3V to V
CC(MAX)
+ 0.3V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current......................................................>200 mA
Device
Range
Ambient Tem-
perature (T
A
)
V
CC
[8]
CY62147DV30L
Industrial –40°C to +85°C 2.20V to 3.60V
CY62147DV30LL
Electrical Characteristics
(Over the Operating Range)
Parameter Description
V
OH
Output HIGH
Voltage
Test Conditions
I
OH
= –0.1 mA V
CC
= 2.20V
I
OH
= –1.0 mA V
CC
= 2.70V
I
OL
= 0.1 mA V
CC
= 2.20V
I
OL
= 2.1 mA V
CC
= 2.70V
V
CC
= 2.2V to 2.7V
CY62147DV30-45
Min. Typ.
[5]
Max. Min. Typ.
[5]
2.0
2.4
0.4
0.4
1.8
V
CC
+
0.3V
2.2
V
CC
+
0.3V
–0.3
0.6
–0.3
0.8
–1
+1
CY62147DV30-55
CY62147DV30-70
Max. Min. Typ.
[5]
2.0
2.4
0.4
0.4
V
CC
+
0.3V
V
CC
+
0.3V
0.6
–0.3
0.8
–0.3
+1
–1
Unit
V
V
V
V
V
Max.
2.0
2.4
V
OL
Output LOW
Voltage
0.4
0.4
V
CC
+
0.3V
V
CC
+
0.3V
0.6
0.8
+1
V
IH
Input HIGH
Voltage
1.8
1.8
V
CC
= 2.7V to 3.6V
2.2
2.2
V
V
IL
Input LOW
Voltage
V
CC
= 2.2V to 2.7V
V
CC
= 2.7V to 3.6V
GND < V
I
< V
CC
–0.3
–0.3
–1
V
V
μ
A
I
IX
Input
Leakage
Current
Output
Leakage
Current
V
CC
Operating
Supply
Current
Automatic
CE
Power-Down
Current —
CMOS
Inputs
Automatic
CE
Power-Down
Current —
CMOS
Inputs
I
OZ
GND < V
O
< V
CC
, Output
Disabled
–1
+1
–1
+1
–1
+1
μ
A
I
CC
f = f
MAX
=
1/t
RC
f = 1 MHz
V
CC
=V
CCmax
I
OUT
= 0 mA
CMOS levels
10
20
8
15
8
15
mA
1.5
3
1.5
3
1.5
3
mA
I
SB1
CE > V
CC
0.2V,
V
IN
>V
CC
–0.2V, V
IN
<0.2V)
f = f
MAX
(Address and Data
Only),
f = 0 (OE, WE, BHE and
BLE), V
CC
= 3.60V
CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or
V
IN
< 0.2V,
f = 0, V
CC
= 3.60V
L
LL
2
12
8
2
12
8
2
12
8
μ
A
I
SB2
L
LL
2
12
8
2
12
8
2
12
8
μ
A
Notes:
6. V
IL(min.)
= –2.0V for pulse durations less than 20 ns.
7. V
=V
+ 0.75V for pulse durations less than 20 ns.
8. Full device AC operation assumes a 100-
μ
s ramp time from 0 to V
CC
(min) and 200-
μ
s wait time after V
CC
stabilization.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY62147DV30L-70BVXI | 4-Mbit (256K x 16) Static RAM |
| CY62147DV30L-70ZSXI | 4-Mbit (256K x 16) Static RAM |
| CY62147DV30LL | 4-Mbit (256K x 16) Static RAM |
| CY62147DV30LL-45BVI | 4-Mbit (256K x 16) Static RAM |
| CY62147DV30LL-70BVXI | 4-Mbit (256K x 16) Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY62147DV30L-70BVXI | 制造商:Cypress Semiconductor 功能描述: |
| CY62147DV30L-70ZSI | 制造商:Cypress Semiconductor 功能描述:4MB (256K X 16) 3.0V LOW POWER SLOW SRAM - Bulk |
| CY62147DV30L-70ZSXI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY62147DV30LL | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (256K x 16) Static RAM |
| CY62147DV30LL-45BVI | 制造商:Cypress Semiconductor 功能描述:SRAM ASYNC SGL 2.5V/3.3V 4MBIT 256KX16 45NS 48VFBGA - Bulk |
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