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| 型號(hào)： | CY62138VNLL-70BAI |
| 廠(chǎng)商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 256K x 8 Static RAM |
| 中文描述： | 256K X 8 STANDARD SRAM, 70 ns, PBGA36 |
| 封裝： | 7 X 7 MM, 1.20 MM HEIGHT, FBGA-36 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 410K |
| 代理商： | CY62138VNLL-70BAI |
CY62138VN MoBL
Document #: 001-06513 Rev. **
Page 2 of 8
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground Potential...............–0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State
[2]
....................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[2]
................................–0.5V to V
CC
+ 0.5V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Device
CY62138VN Industrial
Range
Ambient
Temperature
–40°C to +85°C
V
CC
2.7V to 3.6V
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
Description
Test Conditions
CY62138VN
Typ.
[1]
Unit
V
V
V
V
μ
A
μ
A
Min.
2.4
Max.
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
I
OH
= -1.0 mA
I
OL
= 2.1 mA
V
CC
= 2.7V
V
CC
= 2.7V
V
CC
= 3.6V
V
CC
= 2.7V
0.4
2.2
–0.5
–1
–1
V
CC
+ 0.5V
0.8
+1
+1
GND < V
I
< V
CC
GND < V
O
< V
CC
, Output
Disabled
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC,
CMOS Levels
I
OUT
= 0 mA,
f = 1 MHz,
CMOS Levels
CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V or
V
IN
< 0.3V, f = f
MAX
CE > V
CC
– 0.3V
V
IN
> V
CC
– 0.3V
or V
IN
< 0.3V, f = 0
±1
+1
I
CC
V
CC
Operating Supply
Current
V
CC
= 3.6V
7
15
mA
1
2
mA
I
SB1
Automatic CE
Power-down Current—
CMOS Inputs
Automatic CE
Power-down Current—
CMOS Inputs
V
CC
= 3.6V
100
μ
A
I
SB2
V
CC
= 3.6V
1
15
μ
A
Capacitance
[3]
Parameter
Description
Test Conditions
Max.
Unit
C
IN
C
OUT
Input Capacitance
T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
6
pF
Output Capacitance
8
pF
Notes:
2. V
(min) = –2.0V for pulse durations less than 20 ns.
3. Tested initially and after any design or process changes that may affect these parameters.
[+] Feedback
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