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參數(shù)資料
| 型號： | CY62136FV30LL-55ZSXE |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 2-Mbit (128K x 16) Static RAM |
| 中文描述： | 128K X 16 STANDARD SRAM, 55 ns, PDSO44 |
| 封裝： | LEAD FREE, TSOP2-44 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 428K |
| 代理商： | CY62136FV30LL-55ZSXE |
CY62136FV30 MoBL
Document Number: 001-08402 Rev. *D
Page 4 of 12
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters
.
Parameter
Θ
JA
Description
Test Conditions
VFBGA
75
TSOP II
77
Unit
°
C/W
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Still air, soldered on a 3 × 4.5 inch,
two layer printed circuit board
Θ
JC
10
13
°
C/W
AC Test Loads and Waveforms
Figure 3. AC Test Loads and Waveforms
Parameters
R1
R2
R
TH
V
TH
2.5V (2.2V to 2.7V)
16667
15385
8000
1.20
3.0V (2.7V to 3.6V)
1103
1554
645
1.75
Unit
V
Data Retention Characteristics
Over the Operating Range
Parameter
Description
Conditions
Min
Typ
[1]
Max
Unit
V
DR
I
CCDR [7]
V
CC
for Data Retention
Data Retention Current
1.5
V
V
CC
= 1.5V, CE > V
CC
- 0.2V,
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
Industrial
4
μ
A
Automotive
12
t
CDR [8]
t
R [9]
Chip Deselect to Data Retention Time
0
ns
Operation Recovery Time
t
RC
ns
Data Retention Waveform
Figure 4. Data Retention Waveform
[10]
V
CC
V
CC
OUTPUT
R2
30 pF
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT
Equivalent to: THéVENIN EQUIVALENT
ALL INPUT PULSES
R
TH
R1
V
INCLUDING
JIG AND
SCOPE
V
CC(min)
V
CC(min)
t
CDR
V
DR
> 1.5V
DATA RETENTION MODE
t
R
V
CC
CE or
BHE.BLE
Notes
8. Tested initially and after any design or process changes that may affect these parameters.
9. Full device operation requires linear V
ramp from V
to V
> 100
μ
s or stable at V
> 100
μ
s.
10.BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY62136FV30LL-55ZSXET | 功能描述:靜態(tài)隨機存取存儲器 SLo 3.0V SUPER LoPwr 1MEGX16 PbFree 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62136V | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (128K x 16) Static RAM |
| CY62136V18LL-70BAI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| CY62136VLL | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:128K x 16 Static RAM |
| CY62136VLL-55BAI | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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