- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378988 > CXK77B1841GB (Sony Corporation) 4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、寫延遲、LVTTL高速同步靜態(tài)RAM (256K x 18位)) PDF資料下載
參數(shù)資料
| 型號： | CXK77B1841GB |
| 廠商： | Sony Corporation |
| 英文描述： | 4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、寫延遲、LVTTL高速同步靜態(tài)RAM (256K x 18位)) |
| 中文描述： | 4Mb的后寫入LVTTL高速同步SRAM（256 × 18位）（4分位，寫延遲，LVTTL高速同步靜態(tài)隨機存儲器（256 × 18位）） |
| 文件頁數(shù)： | 9/22頁 |
| 文件大?。?/td> | 199K |
| 代理商： | CXK77B1841GB |
256Kx18, Sync LW, LVTTL, rev 4.6
9 / 22
August 12, 1998
SONY
CXK77B1841GB
AC Electrical Characteristics (Register-Latch & Register-Flow Thru Modes)
1. All parameters are specified over the range T
A
= 0 to 70
o
C.
2. These parameters are sampled and are not 100% tested.
Item
Symbol
-45
-5
-6
Unit
Min
Max
Min
Max
Min
Max
Cycle Time
t
KHKH
5.5
---
5.7
---
6.0
---
ns
Clock High Pulse Width
t
KHKL
1.5
---
1.5
---
2.0
---
ns
Clock Low Pulse Width
t
KLKH
1.5
---
1.5
---
2.0
---
ns
Address Setup Time
t
AVKH
0.5
---
0.5
---
0.5
---
ns
Address Hold Time
t
KHAX
1.0
---
1.0
---
1.0
---
ns
Write Enables Setup Time
t
WVKH
0.5
---
0.5
---
0.5
---
ns
Write Enables Hold Time
t
KHWX
1.0
---
1.0
---
1.0
---
ns
Synchronous Select Setup Time
t
SVKH
0.5
---
0.5
---
0.5
---
ns
Synchronous Select Hold Time
t
KHSX
1.0
---
1.0
---
1.0
---
ns
Data Input Setup Time
t
DVKH
0.5
---
0.5
---
0.5
---
ns
Data Input Hold Time
t
KHDX
1.0
---
1.0
---
1.0
---
ns
Clock High to Output Valid
t
KHQV
t
KHQX*2
---
5.5
---
5.7
---
6.0
ns
Clock High to Output Hold
(Flow Thru mode only)
2.0
---
2.0
---
2.0
---
ns
Clock High to Output Low-Z
(Flow Thru mode only)
t
KHQX1*2
2.0
---
2.0
---
3.0
---
ns
Clock Low to Output Valid
(Latch mode only)
t
KLQV
---
2.3
---
2.5
---
2.5
ns
Clock Low to Output Hold
(Latch mode only)
t
KLQX*2
0.7
---
0.7
---
0.7
---
ns
Clock Low to Output Low-Z
(Latch mode only)
t
KLQX1*2
0.7
---
0.7
---
0.7
---
ns
Clock High to Output High-Z
(SS Deselect Cycle)
t
KHQZ*2
---
2.0
---
2.0
---
2.0
ns
Clock High to Output High-Z
(SW Write Cycle)
t
KHQZ1*2
---
2.0
---
2.0
---
2.0
ns
Output Enable Low to Output Valid
t
GLQV
t
GLQX*2
t
GHQZ*2
t
ZZE*2
t
ZZR*2
---
2.3
---
2.5
---
2.5
ns
Output Enable Low to Output Low-Z
0.5
---
0.5
---
0.5
---
ns
Output Enable High to Output High-Z
---
2.3
---
2.5
---
2.5
ns
Sleep Mode Enable Time
---
20.0
---
20.0
---
20.0
ns
Sleep Mode Recovery Time
20.0
---
20.0
---
20.0
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CXK77B3611AGB- | High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3611AGB-5 | High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3611AGB-6 | High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3611AGB | High Speed 1MBit Bi-CMOS Synchronous Static RAM(高速1M位、Bi-CMOS同步靜態(tài)RAM) |
| CXK77B3640AGB | 4Mb Late Write HSTL High Speed Synchronous SRAM(128K x 36Bit)(4M位、寫延遲、高速邏輯收發(fā)（HSTL）、高速同步靜態(tài)RAM (128K x 36位)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK77B1841GB-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Fast Synchronous SRAM |
| CXK77B1841GB-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Fast Synchronous SRAM |
| CXK77B3610AGB-5R | 制造商:Sony Batteries 功能描述:77B3610AGB-5R |
| CXK77B3610GB- | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3610GB-6 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:High Speed Bi-CMOS Synchronous Static RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。