參數(shù)資料
型號(hào): CXK77910AYM
廠商: Sony Corporation
英文描述: 131,072-Word by 9-Bit High-Speed Synchronous Static RAM(131072字 × 9位高速同步靜態(tài)RAM)
中文描述: 131,072由9位字高速同步靜態(tài)存儲(chǔ)器(131072字× 9位高速同步靜態(tài)內(nèi)存)
文件頁(yè)數(shù): 10/11頁(yè)
文件大?。?/td> 187K
代理商: CXK77910AYM
–10–
CXK77910ATM/AYM
Input Voltage Level vs. Supply Voltage
V
I
,
I
Standby Current vs. Supply Voltage
V
CC
— Supply Voltage [V]
5.25
5.5
4.75
5.0
4.5
1.4
1.2
1.0
0.8
0.6
I
S
I
SB
Ta = +25°C
Standby Current vs. Ambient Temperature
1.8
Ta — Ambient Temperature [°C]
60
80
20
40
0
1.4
1.0
0.6
0.2
I
S
V
CC
= 5.0V
Input Voltage Level vs. Ambient Temperature
1.4
Ta — Ambient Temperature [°C]
60
80
20
40
0
1.2
1.0
0.8
0.6
V
I
,
I
V
CC
= 5.0V
V
CC
— Supply Voltage [V]
5.25
5.5
4.75
5.0
4.5
1.4
1.2
1.0
0.8
0.6
Ta = +25°C
V
OH
— Output High Voltage [V]
3
4
1
2
0
4
3
2
1
0
V
CC
= 5.0V
Ta = +25°C
Output Low Current vs. Output Low Voltage
1.8
V
OL
— Output Low Voltage [V]
0.6
0.8
0.2
0.4
0
1.4
1.0
0.6
0.2
I
O
V
CC
= 5.0V
Ta = +25°C
I
O
Output High Current vs. Output High Voltage
V
IIL
,V
IIH
V
IL
,V
IH
相關(guān)PDF資料
PDF描述
CXK77910ATM 131,072-Word by 9-Bit High-Speed Synchronous Static RAM(131072字 × 9位高速同步靜態(tài)RAM)
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CXK77B3641AGB 4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、寫(xiě)延遲、高速邏輯收發(fā)(HSTL)、高速同步靜態(tài)RAM (128K x 36位))
CXK77B1841GB 4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、寫(xiě)延遲、LVTTL高速同步靜態(tài)RAM (256K x 18位))
CXK77B3611AGB- High Speed Bi-CMOS Synchronous Static RAM
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