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參數(shù)資料
| 型號： | CNZ1120 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 開關 |
| 英文描述： | Photo Interrupter |
| 中文描述： | 10 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT |
| 封裝： | PLASTIC, PISTR104-014, 4 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 30K |
| 代理商： | CNZ1120 |
1
Transmissive Photosensors (Photo Interrupters)
CNZ1120
Photo Interrupter
10.0
±
0.3
A
(15.5)
(2.54)
2-C0.5
19.0
±
0.35
A'
SEC. A-A'
Pin connection
Unit : mm
2-0.45
2
3
1
4
6.2
±
0.25
1
±
0
3
3
±
0
(
2
3
1
4
(Note) ( ) Dimension is reference
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
For contactless SW, object detection
Features
Wide gap between emitting and detecting elements, suitable for
thick plate detection Gap : 10mm
Fast response : t
r
, t
f
= 6
μ
s (typ.)
The external case is molded using visible light cutoff resin. The
case has no openings, so the photosensor is not easily susceptible
to output attenuation resulting from dust or particles
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
Symbol
Ratings
V
R
I
F
P
D*1
I
C
V
CEO
V
ECO
P
C*2
T
opr
–5 to +60
T
stg
–15 to +65
Unit
V
mA
mW
mA
V
V
mW
C
C
Input (Light
emitting diode)
3
50
75
20
20
5
100
Output (Photo
Collector to emitter voltage
transistor)
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Storage temperature
Temperature
Electrical Characteristics
(Ta = 25C)
Parameter
Forward voltage (DC)
characteristics
Reverse current (DC)
Collector cutoff current
characteristics
Collector to emitter capacitance
Collector current
Response time
Symbol
V
F
I
R
I
CEO
C
C
I
C
t
r
, t
f*2
V
CC
= 10V, I
C
= 1mA, R
L
= 100
Conditions
min
typ
1.2
max
1.5
10
200
Unit
V
μ
A
nA
pF
mA
μ
s
V
Input
I
F
= 50mA
V
R
= 3V
V
CE
= 10V, I
F
= 0mA, I
D
= 0mA
*1
V
CE
= 10V, f = 1MHz
V
CE
= 10V, I
F
= 20mA, R
L
= 100
Output
5
Transfer
characteristics
1.0
6
Collector to emitter saturation voltage
V
CE(sat)
I
F
= 50mA, I
C
= 0.1mA
0.4
*1
I
D
: Leakage current due to scattered light
*2
Switching time measurement circuit
Overview
CNZ1120 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
*1
Input power derating ratio is
1.0 mW/C at Ta
≥
25C.
*2
Output power derating ratio is
1.33 mW/C at Ta
≥
25C.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CNZ1120(ON1120) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Opto-Electronic Device - Photocouplers·Photosensors - Transmissive Photosensors |
| CNZ1122 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Photo Interrupters |
| CNZ1122/CNZ1128(ON1122/ON1128) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:CNZ1122. CNZ1128 (ON1122. ON1128) - Photo Interrupters |
| CNZ1128 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Photo Interrupters |
| CNZ1179 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Photo Interrupter |
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