參數(shù)資料
型號: CNZ1215
廠商: PANASONIC CORP
元件分類: 開關
英文描述: Photo Interrupter
中文描述: 3 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH DARLINGTON OUTPUT
文件頁數(shù): 1/2頁
文件大?。?/td> 50K
代理商: CNZ1215
1
Transmissive Photosensors (Photo Interrupters)
CNZ1215
Photo Interrupter
*10.0
+0.1
–0.4
2-0.45
±
0.2
14.3
±
0.3
3.0
±
0.2
19.0
±
0.2
2-3.2
±
0.2
25.0
±
0.35
Mark for indicating
LED side
6
±
0
2
±
0
1
±
0
7
2
3
1
4
Pin connection
Unit : mm
2
3
1
4
(Note) * is dimension at the root of leads
(Input pulse)
(Output pulse)
t
d
: Delay time
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
Sig.OUT
R
L
10%
90%
t
d
t
r
t
f
50
V
CC
Sig.IN
For contactless SW, object detection
Features
Highly precise position detection : 0.3 mm
Large output current : IC = 2 mA (min.)
High resolution
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
Symbol
Ratings
V
R
I
F
P
D*1
I
C
V
CEO
V
ECO
P
C*2
T
opr
–25 to +80
T
stg
–30 to +100
Unit
V
mA
mW
mA
V
V
mW
C
C
Input (Light
emitting diode)
3
25
70
30
20
5
100
Output (Photo
Collector to emitter voltage
transistor)
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Storage temperature
Temperature
Electrical Characteristics
(Ta = 25C)
Parameter
Forward voltage (DC)
characteristics
Reverse current (DC)
Collector cutoff current
characteristics
Collector to emitter capacitance
Collector current
Response time
Symbol
V
F
I
R
I
CEO
C
C
I
C
t
r
, t
f*
Conditions
min
typ
2.1
max
2.8
5
600
Unit
V
μ
A
nA
pF
mA
μ
s
V
Input
I
F
= 20mA
V
R
= 3V
V
CE
= 10V
V
CE
= 10V, f = 1MHz
V
CE
= 10V, I
F
= 5mA, R
L
= 300
V
CC
= 10V, I
C
= 5mA, R
L
= 100
Output
100
5
Transfer
characteristics
2
100
0.7
Collector to emitter saturation voltage
V
CE(sat)
I
F
= 10mA, I
C
= 1mA
*
Switching time measurement circuit
1.5
Overview
CNZ1215 is a photocoupler in which a visible light emitting diode
is used as the light emitting element, and a high sensitivity Darlington
phototransistor is used as the light detecting element. The two
elements are arranged so as to face each other, and objects passing
between them are detected.
*1
Input power derating ratio is
0.93 mW/C at Ta
25C.
*2
Output power derating ratio is
1.33 mW/C at Ta
25C.
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