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參數(shù)資料
| 型號： | CNZ2153 |
| 廠商： | Panasonic Corporation |
| 英文描述： | Reflective Photosensor |
| 中文描述： | 反光光敏 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 91K |
| 代理商： | CNZ2153 |
1
Publication date: April 2004
SHG00053BED
Reflective Photosensors (Photo Reflectors)
CNZ2153
(ON2153)
Reflective photosensor
Non-contact point SW, object sensing
Note) 1. Input and output are handled electrically.
2. This product is not designed to withstand radiation
3.*1: Output current measurement circuit
(Ambient light is shut off completely)
*2: Rank classification
Rank
Q
I
C
(
μ
A)
100 to 300
■
Overview
CNZ2153 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a Si phototransistor is used as the
light detecting element. The two elements are located parallel in the
same direction and objects are detected when passing in front of the
device.
■
Features
Fast response
Small size and light weight
■
Applications
Detection of paper, film and cloth
Optical mark reading
Detection of coin and bill
Start, end mark detection of magnetic tape
■
Absolute Maximum Ratings
T
a
=
25
°
C
Detection of position and edge
Unit: mm
Parameter
Reverse voltage
Symbol
V
R
I
F
P
D
V
CEO
Rating
3
50
75
30
Unit
V
mA
mW
V
Input (Light
emitting diode) Forward current
Power dissipation
*1
Output (Photo Collector-emitter voltage
transistor)
(Base open)
Emitter-collector voltage
(Base open)
Collector current
Collector power dissipation
*2
Operating ambient temperature
Storage temperature
V
ECO
5
V
I
C
P
C
T
opr
T
stg
20
50
mA
mW
°
C
°
C
Temperature
25 to
+
85
30 to
+
100
Parameter
Forward voltage
Symbol
V
F
I
R
C
t
I
CEO
Conditions
Min
Typ
1.2
Max
1.5
10
Unit
V
μ
A
pF
μ
A
Input
characteristics
Reverse current
Terminal capacitance
Collector-emitter cutoff current
characteristics
(Base open)
Collector current
*1, 2
characteristics
Collector-emitter saturation voltage
V
CE(sat)
Rise time
Fall time
I
F
=
50 mA
V
R
=
3 V
V
R
=
0 V, f
=
1 MHz
V
CE
=
10 V
50
Output
0.2
Transfer
I
C
V
CC
=
5 V, I
F
=
20 mA, R
L
=
100
I
F
=
50 mA, I
C
=
0.1 mA
V
CC
=
10 V, I
C
=
0.1 mA, R
L
=
100
100
1200
0.5
μ
A
V
μ
s
μ
s
t
r
t
f
6.0
6.0
(Note)
1. ( ) Dimension is reference
2. * is dimension at the root of leads
φ
2.2
±0.2
Mark for indicating
LED side
10.6
±0.3
9.6
±0.3
7.5
±0.2
(3.2)
(7.2)
2
3
1
4
φ
0.3
±0.05
*2-0.9
±0.15
φ
0.45
±0.05
3
±
4
±
1
±
6
±
1
0
1: Cathode
2: Anode
3: Emitter
4: Collector
PRSTR104-002 Package
R
S
No-rank
200 to 600
400 to 1
200 100 to 1
200
R
L
I
F
I
C
V
CC
d
=
3 mm
White paper
(Reflective ratio 90%)
Note)*1: Input power derating ratio is
1.0 mW/
°
C at T
a
≥
25
°
C.
*2: Output power derating ratio is
0.67 mW/
°
C at T
a
≥
25
°
C.
■
Electrical-Optical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) The part number in the parenthesis
shows conventional part number.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CNZ2153(ON2153) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:CNZ2153 (ON2153) - Reflective Photosensor |
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| CNZ2179(ON2179) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:光デバイス － フォトカプラ?フォトセンサ － 反射形フォトセンサ |
| CNZ2253 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Reflective Photosensor |
| CNZ2253(ON2253) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:光デバイス － フォトカプラ?フォトセンサ － 反射形フォトセンサ |
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