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| 型號： | CNZ2152 |
| 廠商： | Panasonic Corporation |
| 英文描述： | Reflective Photosensor |
| 中文描述： | 反光光敏 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 53K |
| 代理商： | CNZ2152 |
1
Reflective Photosensors (Photo Reflectors)
CNZ2152
Reflective Photosensor
Overview
CNZ2152 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a high sensitivity Si phototransistor
is used as the light detecting element. The two elements are located
parallel in the same direction and objects are detected when passing
in front of the device.
Features
Fast response
High sensitivity
High SN ratio
Applications
Detection of paper, film and cloth
Optical mark reading
Detection of coin and bill
Detection of position and edge
Start, end mark detection of magnetic tape
*1
Standard white paper (reflective ratio 90%)
*2
Tracing paper (paper SM-1 for 2nd original paper)
Unit : mm
(10.0)
(2.54)
4-0.45
0.9
+0.1
+
1
–
+0.1
14.0
16.0
±
0.3
1
±
0
6
±
0
7
1
2.2
±
0.2
Mark for
indicating
LED side
1.5
3
±
0
3
±
0
8
±
0
Pin connection
1
4
3
2
2
3
1
4
(Note) ( ) Dimension is reference
R
L
I
F
I
C
V
CC
d = 5 mm
Test paper
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector to emitter voltage
Symbol
Ratings
V
R
I
F
P
D*1
V
CEO
V
ECO
I
C
P
C*2
T
opr
–25 to +85
T
stg
–30 to +100
Unit
V
mA
mW
V
V
mA
mW
C
C
Input (Light
emitting diode)
3
100
150
20
3
30
150
Output (Photo
Emitter to collector voltage
transistor)
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Temperature
Electrical Characteristics
(Ta = 25C)
Parameter
Forward voltage (DC)
characteristics
Reverse current (DC)
Symbol
V
F
I
R
I
CEO
I
C*1
I
C*2
t
r*3
, t
f*4
V
CC
= 10V, I
C
= 1mA, R
L
= 100
Conditions
min
typ
1.25
max
1.5
10
2
Unit
V
μ
A
μ
A
mA
μ
A
μ
s
V
Input
I
F
= 100mA
V
R
= 3V
V
CE
= 10V
Output characteristics
Collector cutoff current
0.05
3
500
8
Collector current
V
CC
= 5V, I
F
= 20mA, R
L
= 100
0.8
Transfer
characteristics
Response time
Collector to emitter saturation voltage
V
CE(sat)
I
F
= 100mA, I
C
= 1mA
0.6
*1 *2
Transfer characteristics measurement circuit
(Ambient light is shut off completely)
*3
Time required for the collector current to increase from
10% to 90% of its final value.
*4
Time required for the collector current to decrease from
90% to 10% of its initial value.
*1
Input power derating ratio is
2.0 mW/C at Ta
≥
25C.
*2
Output power derating ratio is
2.0 mW/C at Ta
≥
25C.
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| CNZ2152(ON2152) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:光デバイス － フォトカプラ?フォトセンサ － 反射形フォトセンサ |
| CNZ2153 | 功能描述:SENSR OPTO TRANS 3MM REFL TH PCB RoHS:是 類別:傳感器，轉(zhuǎn)換器 >> 光學(xué) - 反射式 - 模擬輸出 系列:- 產(chǎn)品變化通告:Product Discontinuation 03/Dec/2009 標(biāo)準(zhǔn)包裝:50 系列:- 檢測距離:0.157" (4mm) 檢測方法:反射 電壓 - 集電極發(fā)射極擊穿（最大）:30V 電流 - 集電極 (Ic)（最大）:- 電流 - DC 正向(If):50mA 輸出類型:光電晶體管 響應(yīng)時(shí)間:10µs，50µs 安裝類型:通孔 封裝/外殼:PCB 安裝 包裝:散裝 工作溫度:-40°C ~ 85°C |
| CNZ2153(ON2153) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:CNZ2153 (ON2153) - Reflective Photosensor |
| CNZ2179 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Reflective Photosensor |
| CNZ2179(ON2179) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:光デバイス － フォトカプラ?フォトセンサ － 反射形フォトセンサ |
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