參數(shù)資料
型號: CDQ0303-QS-000T
元件分類: 放大器
英文描述: 500 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: 4 X 4 MM, ULTRA COMPACT, PLASTIC, QS, QFN-16
文件頁數(shù): 15/19頁
文件大?。?/td> 964K
代理商: CDQ0303-QS-000T
3236 Scott Boulevard, Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095
CDQ0303-QS
Advanced Product Information - May 2005
V1.0 (4 of 18)
Typical Performance
OIP3 and P1dB vs. Bias at 2GHz
0
5
10
15
20
25
30
35
0
10
203040
5060
IDSQ (mA)
OIP3,
P
1dB
(dBm)
4V
3V
2V
OIP3
P1dB
OIP3 and P1dB vs. IDSQ at 1GHz
0
5
10
15
20
25
30
35
0
102030
405060
IDSQ (mA)
OIP3,
P
1dB
(dBm)
4V
3V
2V
OIP3
P1dB
NF and Ga vs. Bias at 2GHz
0
0.15
0.3
0.45
0.6
0.75
0.9
1.05
1.2
1.35
1.5
1.65
0
10
20304050
6070
IDSQ(mA)
NFmin(dB)
5
6.5
8
9.5
11
12.5
14
15.5
17
18.5
20
21.5
Ga(dB)
3V
2V
4V
Ga
NFmin
NF and Ga vs. Bias at 1GHz
0
0.15
0.3
0.45
0.6
0.75
0.9
1.05
1.2
1.35
1.5
1.65
0
10
20304050
6070
IDSQ(mA)
NFmin(dB)
7
8.5
10
11.5
13
14.5
16
17.5
19
20.5
22
23.5
Ga(dB)
3V
2V
4V
Ga
NFmin
Notes:
1. P1dB and OIP3 measurements are performed with passive biasing. Idsq is set with zero RF drive applied. As P1dB is approached, the drain current may
increase or decrease depending on frequency and DC bias point. At lower values of Idsq the device is running in a Class AB mode and current tends to rise as
P1dB is approached. As an example, at a Vds = 3.0V and Idsq = 10 mA, Id increases to 30 mA as P1dB of 16.5 dBm is approached. This rise in current is no
longer present as Idsq approaches 60 mA.
2. Measurements made on a fixed tuned test system set for optimum noise match. Circuit losses have been de-embedded for the actual measurements..
1, 2
2
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