參數(shù)資料
型號(hào)： CDQ0303-QS-000T
元件分類： 放大器
英文描述： 500 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝： 4 X 4 MM, ULTRA COMPACT, PLASTIC, QS, QFN-16
文件頁(yè)數(shù)： 12/19頁(yè)
文件大小： 964K
代理商： CDQ0303-QS-000T
3236 Scott Boulevard
Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095
CDQ0303-QS
Description
The CDQ0303-QS is a dual, ultra low-noise amplifi-
er combining high gain, state-of-the-art noise figure and high
IP3. Utilizing Celeritek’s distinctive in-house GaAs fabrica-
tion advantage and matched pair technology, co-located
matched transistor die are assembled in the 4mm x 4mm
QFN package. The low-cost, surface-mount, 16 terminal,
plastic package is also lead-free.
Packaging a matched pair of ultra low-noise devices
in a single package makes the CDQ0303-QS an ideal product
for balanced amplifier implementation. It is intended for
many applications operating in the 900 MHz to 2400 MHz
frequency range. It can also be used in a dual-band configu-
ration where a single transistor is used for each band.
Celeritek’s high performance packaged pHEMTs are
ideal for use in all applications where low-noise figure, high
gain, medium power and good intercept is required. The
CDQ0303-QS is the perfect solution for the first or second
stage of a base station LNA due to the excellent combination
of low-noise figure and linearity. It is also well suited as a
medium power driver stage in pole-top amplifiers and other
transmit functions, particularly as the low thermal resistance
allows extended power dissipation when voltage and current
are adjusted for increased power and linearity.
500 MHz to 6000 MHz
Dual, Ultra Low-Noise,
High IP3 Amplifier
Advanced Product Information
May 2005 V1.0
(1 of 18)
Features
Matched Pair of Transistors for Optimum
Ballanced Amplifier Design
AlGaAs/InGaAs/AlGaAs pseudomorphic
High Electron Mobility Transistor (pHEMT)
High Gain:
25 dB @ 900 MHz
21 dB @ 1900 MHz
Low Noise Figure:
0.6 dB @ 900 MHz,
0.7 dB @ 1900 MHz
17 dBm P1dB at 2 GHz
33 dBm OIP3 at 2 GHz
600m Gate Width: 50 Output Impedance
Excellent Uniformity
Ultra Compact Surface-Mount QFN Package
Lead Free Construction
10 Year MTBF Lifetime
Excellent Uniformity
Applications
Low Noise amplifiers and Oscillators
Operating over the RF and Microwave
Frequency Ranges
Cellular/PCS/GSM/W-CDMA
Mobile Handsets, Base station Receivers and
Tower-Mount Amplifiers
WiMAX WLAN, LEO, GEO, WLL/RLL,
GPS and MMDS Applications
General Purpose Discrete pHEMT for Other
Ultra Low-Noise and Medium Power
Applications
Typical Specifications (50
System)
Parameter
900 MHz
1900 MHz 2400 MHz
Units
S21 Gain
23.5
20.0
16.0
dB
S11 Input Return Loss
-3.0
-4.0
-3.0
dB
S22 Output Return Loss
-3.5
-4.5
-7.0
dB
Output IP3
31.8
32.5
32.7
dBm
Output P1 dB
16.5
16.0
dBm
Noise FIgure
0.55
0.72
0.89
dB
Operating Current Range
50
mA
Supply Voltage
3.0
V
Note: Typical specifications represents performance for each side of
the matched pair of transistors in the recommended application circuit
board (see page 15). It is anticipated that the pair will be used in a bal-
anced circuit configuration, hence the matches are optimized for best
noise figure and OIP3 performance.
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