參數(shù)資料
型號: CDQ0303-QS-000T
元件分類: 放大器
英文描述: 500 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: 4 X 4 MM, ULTRA COMPACT, PLASTIC, QS, QFN-16
文件頁數(shù): 13/19頁
文件大?。?/td> 964K
代理商: CDQ0303-QS-000T
3236 Scott Boulevard, Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095
CDQ0303-QS
Advanced Product Information - May 2005
V1.0 (2 of 18)
Absolute Maximum Ratings 1
Parameter
Rating
Parameter
Rating
Parameter
Rating
Drain-Source Voltage 2
+5.5 V
Drain Current 2
Idss 3 A
Channel Temperature
+175°C
Gate-Source Voltage 2
-5.0 V
Total Pwr Dissipation
1.12 W
Storage Temperature
-65°C to +160°C
Gate-Drain Voltage 2
-5.0 V
RF Input Power
17 dBm
Thermal Resistance
70°C/W
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage
2. Assumes DC quiescent conditions. RF OFF.
3. Vgs=0V
Parameters
Test Conditions
Min
Typ
Max
Units
Operating Frequency
500
3000
MHz
DC Supply Voltage
Vdd Only
3
V
Saturated Drain Current (Per Device)
Vds=4.5V, Vgs=0V
120
165
200
mA
Idd (Per Device)
Vgg=-0.65 nom
60
mA
Transconductance (Per Device)
Vds=4.5V. Gm=Idss/Vp
190
250
mmho
Associated Gain 1
f=900 MHz
Vd=3V, Ids=50 mA
23
25
dB
f=1900 MHz
Vd=3V, Ids=50 mA
18
20
dB
Noise Figure 1
f=900 MHz
Vd=3V, Ids=50 mA
0.6
dB
f=1900 MHz
Vd=3V, Ids=50 mA
0.7
dB
Output Third Order Intercept Point 1
f=900 MHz
Vd=3V, Ids=50 mA
29
dBm
f=1950 MHz
Vd=3V, Ids=50 mA
29
dBm
Isolation (Between IN1 and IN2)
f=900 MHz
Vd=3V, Ids=50 mA
34
dB
f=1950 MHz
Vd=3V, Ids=50 mA
29
dB
Input Overdrive Tollerance Level
Returns to full operation after 1 min.
17
dBm
ESD (ESD precautions should be followed)
ESD (HBM) for (All I/Os)
600
V
Electrical Characteristics
Ta=25°C, Typical device RF parameters measured in test system.
Notes:
1. Measured in Celeritek Evaluation Board (No circuit de-embedding used). See page 15.
Pin Out Detail
Pin
Function
Description
16
IN 1
Amplifier 1 RF Input
13
IN 2
Amplifier 2 RF Input
5
OUT 1
Amplifier 1 RF Output
8
OUT 2
Amplifier 2 RF Output
1, 2, 3, 4
VS 1
Amplifier 1 Source Connection
9, 10, 11, 12
VS 2
Amplifier 2 Source Connection
6, 7, 14, 15
GND
Main Heat-Sinking Connection
Functional Block Diagram
VS 1 1
VS 1 2
VS 1 3
VS 1 4
12 VS 2
11 VS 2
10 VS 2
9 VS 2
OUT
1
5
VS
1
6
VS
2
7
OUT
2
8
16
IN
1
15
VS
1
14
VS
2
13
IN
2
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