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參數(shù)資料
| 型號： | CAT28F010T-90 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | PROM |
| 英文描述： | 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 |
| 封裝： | 8 X 20 MM, TSOP-32 |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 137K |
| 代理商： | CAT28F010T-90 |
CAT28F010
11
Doc. No. MD-1019, Rev. F
2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
28F010 F08
ADDRESSES
CE (E)
OE (G)
WE (W)
DATA (I/O)
VCC
VPP
tWC
tRC
tAS
tAH
tCS
tCH
tCS
tCH
tEHQZ
tDF
tGHWL
tWPH
tWHWH1
tWHGL
tWP
tDS
HIGH-Z
DATA IN
= 40H
DATA IN
= C0H
VALID
DATA OUT
tDH
tWP
tDH
tDS
tWP
tDH
tOLZ
tOE
tOH
tLZ
tCE
tVPEL
VPPH
VPPL
0V
5.0V
VCC POWER-UP
& STANDBY
SETUP PROGRAM
COMMAND
LATCH ADDRESS
& DATA
PROGRAMMING
PROGRAM
VERIFY
COMMAND
PROGRAM
VERIFICATION
VCC POWER-DOWN/
STANDBY
Figure 6. A.C. Timing for Programming Operation
Erase Mode
During the first Write cycle, the command 20H is written
into the command register. In order to commence the
erase operation, the identical command of 20H has to be
written again into the register. This two-step process
ensures against accidental erasure of the memory con-
tents. The final erase cycle will be stopped at the rising
edge of WE, at which time the Erase Verify command
(A0H) is sent to the command register. During this cycle,
the address to be verified is sent to the address bus and
latched when WE goes low. An integrated stop timer
allows for automatic timing control over this operation,
eliminating the need for a maximum erase timing speci-
fication. Refer to AC Characteristics (Program/Erase)
for specific timing parameters.
Erase-Verify Mode
The Erase-verify operation is performed on every byte
after each erase pulse to verify that the bits have been
erased.
Programming Mode
The programming operation is initiated using the pro-
gramming algorithm of Figure 7. During the first write
cycle, the command 40H is written into the command
register. During the second write cycle, the address of
the memory location to be programmed is latched on the
falling edge of WE, while the data is latched on the rising
edge of WE. The program operation terminates with the
next rising edge of WE. An integrated stop timer allows
for automatic timing control over this operation, eliminat-
ing the need for a maximum program timing specifica-
tion. Refer to AC Characteristics (Program/Erase) for
specific timing parameters.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CAT28F010TI-12 | 功能描述:閃存 (128x8) 1M RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F010TI90 | 制造商:ON Semiconductor 功能描述:Flash Parallel 5V 1Mbit 128K x 8bit 90ns 32-Pin TSOP |
| CAT28F010TI-90 | 功能描述:閃存 (128x8) 1M RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F010TR-12 | 功能描述:閃存 (128x8) 1M RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F010TR-90 | 功能描述:閃存 (128x8) 1M RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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