- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄295215 > CAT28F010T-90 (ON SEMICONDUCTOR) 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 PDF資料下載
參數(shù)資料
| 型號： | CAT28F010T-90 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | PROM |
| 英文描述： | 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 |
| 封裝： | 8 X 20 MM, TSOP-32 |
| 文件頁數(shù)： | 1/15頁 |
| 文件大小： | 137K |
| 代理商： | CAT28F010T-90 |
1
Doc. No. MD-1019, Rev. F
2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
DESCRIPTION
The CAT28F010 is a high speed 128K x 8-bit electrically
erasable and reprogrammable Flash memory ideally
suited for applications requiring in-system or after-sale
code updates. Electrical erasure of the full memory
contents is achieved typically within 0.5 second.
It is pin and Read timing compatible with standard
EPROM and EEPROM devices.
Programming and
Erase are performed through an operation and verify
algorithm. The instructions are input via the I/O bus,
using a two write cycle scheme. Address and Data are
latched to free the I/O bus and address bus during the
write operation.
The CAT28F010 is manufactured using Catalyst’s
advanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 32-pin plastic DIP, 32-pin PLCC or 32-pin
TSOP packages.
BLOCK DIAGRAM
FEATURES
s Fast read access time: 90/120 ns
s Low power CMOS dissipation:
–Active: 30 mA max (CMOS/TTL levels)
–Standby: 1 mA max (TTL levels)
–Standby: 100
A max (CMOS levels)
s High speed programming:
–10
s per byte
–2 Sec Typ Chip Program
s 0.5 seconds typical chip-erase
s 12.0V
± 5% programming and erase voltage
s Stop timer for program/erase
s Commercial, industrial and automotive
temperature ranges
s On-chip address and data latches
s JEDEC standard pinouts:
–32-pin DIP
–32-pin PLCC
–32-pin TSOP (8 x 20)
s 100,000 program/erase cycles
s 10 year data retention
s Electronic signature
I/O0–I/O7
I/O BUFFERS
CE, OE LOGIC
SENSE
AMP
DATA
LATCH
ERASE VOLTAGE
SWITCH
PROGRAM VOLTAGE
SWITCH
COMMAND
REGISTER
CE
OE
WE
VOLTAGE VERIFY
SWITCH
ADDRESS
LA
TCH
Y-DECODER
X-DECODER
Y-GATING
1,048,576 BIT
MEMORY
ARRAY
A0–A16
1 Megabit CMOS Flash Memory Licensed Intel
second source
CAT28F010
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CAT28F102NA-12T | 64K X 16 FLASH 12V PROM, 120 ns, PQCC44 |
| CAT28LV64H-25TE13 | 8K X 8 EEPROM 3V, 250 ns, PDSO32 |
| CAT28LV64JI-35TE13 | 8K X 8 EEPROM 3V, 350 ns, PDSO28 |
| CAT28LV64T-30TE13 | 8K X 8 EEPROM 3V, 300 ns, PDSO32 |
| CAT28LV64JA-25T | 8K X 8 EEPROM 3V, 250 ns, PDSO28 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CAT28F010TI-12 | 功能描述:閃存 (128x8) 1M RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F010TI90 | 制造商:ON Semiconductor 功能描述:Flash Parallel 5V 1Mbit 128K x 8bit 90ns 32-Pin TSOP |
| CAT28F010TI-90 | 功能描述:閃存 (128x8) 1M RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F010TR-12 | 功能描述:閃存 (128x8) 1M RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F010TR-90 | 功能描述:閃存 (128x8) 1M RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。